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US 12,581,863 B2Granted
MRAM fabrication and device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
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Abstract
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Claims20
A magnetoresistive random access memory (MRAM) cell comprising:
- a substrate;
- a bottom electrode over the substrate;
- a magnetic tunnel junction (MTJ) over the bottom electrode;
- and
- a top electrode over the MTJ, the top electrode being a single layer of titanium nitride directly contacting the MTJ, the top electrode having a crystal orientation (111) as a dominant crystal orientation concentration.
2 more elements
A magnetoresistive random access memory (MRAM) device comprising:
- a first electrode;
- a second electrode being a single layer of titanium nitride doped with silicon, the second electrode having a crystal orientation (111) as a dominant crystal orientation concentration;
- and
- a magnetic tunnel junction (MTJ) between the first electrode and the second electrode.
1 more element
A device comprising:
- a bottom electrode over a via, the via electrically coupling the bottom electrode to an active device;
- a magnetic tunnel junction (MTJ) over the bottom electrode;
- and
- a top electrode over the MTJ, the top electrode being a single layer of titanium nitride, the top electrode having a crystal orientation (111) as a dominant crystal orientation concentration, and the top electrode having a tensile stress greater than 400 Mpa.
1 more element
Dependencies are inferred from the claim text.