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US 2026/0182253 A1Published application
MRAM Fabrication and Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
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Abstract
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Claims20
A cell comprising:
- a substrate;
- a first electrode over the substrate;
- a metallic structure over the first electrode;
- and
- a second electrode over the metallic structure, wherein the second electrode comprises titanium nitride, and wherein the second electrode has a crystal orientation (111) as a dominant crystal orientation concentration.
2 more elements
A memory device comprising:
- a first electrode;
- a second electrode being a single layer of titanium nitride doped with a dopant, wherein the second electrode has a convex top surface;
- and
- a magnetic structure between the first electrode and the second electrode.
1 more element
A device comprising:
- a bottom electrode;
- a metallic composite layer over the bottom electrode;
- and
- a top electrode over the metallic composite layer, wherein the top electrode comprises titanium nitride, and wherein the top electrode has a tensile stress greater than 400 Mpa.
1 more element
Dependencies are inferred from the claim text.