H01F 41/309
Electroless or electrodeposition processes from plating solution
Official title: {electroless or electrodeposition processes from plating solution}
H01F41/309 (Electroless or electrodeposition processes from plating solution) appears on 17 US grants and 16 published applications in this corpus.
Search patents in H01F- Granted patents
- 17
- Published applications
- 16
- Assignees
- 17
- Inventors
- 48
- Latest grant
- 14 Jan 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 2 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 2 |
| 2015 | 1 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
| 2021 | 0 | 0 |
| 2022 | 2 | 4 |
| 2023 | 1 | 1 |
| 2024 | 1 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Structure and method for MRAM devices having spacer element14 Jan 2025US 12,201,031 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for producing a permanent or soft magnet23 Jul 2024US 12,046,398 B2Centre National De La Recherche Scientifique
- Structure and method for MRAM devices having spacer element23 May 2023US 11,659,774 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing electroplated cobalt-platinum films on substrates20 Dec 2022US 11,532,433 B2University of Florida Research Foundation, Inc.
- Two-bit magnetoresistive random-access memory cell29 Nov 2022US 11,514,962 B2International Business Machines Corporation
- Structure and method for mram devices having spacer element8 May 2025US 2025/0151630 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Chiral magnetic nanocoil and synthesis methods thereof1 Aug 2024US 2024/0254636 A1Korea Institute of Science and Technology
- Structure and method for mram devices having spacer element21 Sep 2023US 2023/0301197 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Mitigation of contamination of electroplated cobalt-platinum films on substrates1 Sep 2022US 2022/0277896 A1
- Structure and method for mram devices having spacer element26 May 2022US 2022/0165936 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Soft magnetic film with compositional modulation and method of manufacturing the film43US 5,489,488 AMatsushita Electric Industrial Co., Ltd. · 1996
- MEMS inductor with very low resistance38US 7,250,842 B1National Semiconductor Corporation · 2007
- Magnetic pole fabrication process and device20US 6,540,928 B1Unaxis USA Inc. · 2003
- Magnetic tunnel junction device and fabrication15US 8,120,126 B2QUALCOMM Incorporated · 2012
- Magnetic tunnel junction device and fabrication11US 8,580,583 B2QUALCOMM Incorporated · 2013