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US 2025/0151630 A1Published application
Structure and method for mram devices having spacer element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiang-Ku SHEN, Dian-Hau CHEN
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Abstract
Methods and devices are provided that include a magnetic tunneling junction (MTJ) element. A first spacer layer abuts sidewalls of the MTJ element. The first spacer layer has a low-dielectric constant (low-k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition.
Claims8
A method, comprising:
- providing a structure have a bottom electrode material layer, a magnetic tunnel junction (MTJ) stack, and a top electrode material layer;
- forming a masking element over the structure;
- etching the bottom electrode material layer, the MTJ stack and the top electrode material layer to form a plurality of MTJ elements;
- depositing a conformal layer of a nitride material on the plurality of MTJ elements;
- etching the conformal layer of nitride material to form first spacer elements on sidewalls of the plurality of MTJ elements;
- after etching the conformal layer of the nitride material, depositing an etch stop layer on the first spacer elements;
- and
- depositing a layer of low-k oxide material comprising silicon, oxygen and at least one dopant over the first spacer elements and interposing the plurality of MTJ elements.
5 more elements
Dependencies are inferred from the claim text.