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US 8,580,583 B2Granted
Magnetic tunnel junction device and fabrication
AssigneeQUALCOMM Incorporated
InventorsKangho Lee, Xiaochun Zhu, Xia Li, Seung H. Kang
Life of this patent
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Abstract
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
Claims17
A method comprising:
- depositing a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer;
- and
- oxidizing a first layer of the capping material to form a first oxidized layer of oxidized material, wherein the first oxidized layer is positioned further from the free layer than a second layer of the capping material.
A method comprising:
- depositing a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer;
- and
- oxidizing a first layer of the capping material to form a first oxidized layer of oxidized material, wherein the first oxidized layer is positioned further from the free layer than a second layer of the capping material, wherein oxidizing the first layer reduces a spin pumping effect of the free layer.
A method comprising:
- a first step for depositing a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer;
- and
- a second step for oxidizing a first layer of the capping material to form a first oxidized layer of oxidized material, wherein the first oxidized layer is positioned further from the free layer than a second layer of the capping material, wherein the first oxidized layer is separated from the free layer by the second layer.
A method comprising:
- depositing a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer;
- and
- oxidizing a first layer of the capping material to form a first oxidized layer of oxidized material, wherein the first oxidized layer is positioned further from the free layer than a second layer of the capping material, and wherein depositing the capping material and oxidizing the first layer are controlled by a processor integrated into an electronic device.
A method comprising:
- forming a barrier layer;
- forming a free layer;
- and
- forming a capping layer, wherein the barrier layer is adjacent to the free layer and the capping layer is adjacent to the free layer, and wherein the capping layer includes a first layer of a substantially non-magnetic material, a second layer of an oxide of the substantially non-magnetic material, and a graded layer, wherein the graded layer comprises the substantially non-magnetic material and the oxide of the substantially non-magnetic material.
1 more element
A method comprising:
- forming a barrier layer;
- forming a free layer;
- and
- forming a capping layer, wherein the barrier layer is adjacent to the free layer and the capping layer is adjacent to the free layer, and wherein the capping layer includes:
- a first layer of a first material;
- a second layer of a second material, wherein the first layer is positioned a first distance from the free layer and the second layer is positioned a second distance from the free layer, the second distance greater than the first distance;
- and
- a buffer layer, wherein the buffer layer is positioned intermediate to the first layer and the free layer.
5 more elements
Dependencies are inferred from the claim text.