H01F 41/303
With exchange coupling adjustment of magnetic film pairs
Official title: {with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation}
H01F41/303 (With exchange coupling adjustment of magnetic film pairs) appears on 177 US grants and 187 published applications in this corpus.
Search patents in H01F- Granted patents
- 177
- Published applications
- 187
- Assignees
- 61
- Inventors
- 328
- Latest grant
- 8 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 6 | 4 |
| 2002 | 4 | 4 |
| 2003 | 8 | 12 |
| 2004 | 5 | 10 |
| 2005 | 7 | 12 |
| 2006 | 15 | 14 |
| 2007 | 10 | 17 |
| 2008 | 6 | 13 |
| 2009 | 9 | 11 |
| 2010 | 6 | 8 |
| 2011 | 15 | 9 |
| 2012 | 8 | 17 |
| 2013 | 19 | 15 |
| 2014 | 8 | 5 |
| 2015 | 10 | 4 |
| 2016 | 6 | 3 |
| 2017 | 3 | 3 |
| 2018 | 5 | 4 |
| 2019 | 4 | 8 |
| 2020 | 3 | 6 |
| 2021 | 3 | 2 |
| 2022 | 3 | 1 |
| 2023 | 1 | 1 |
| 2024 | 1 | 1 |
| 2025 | 3 | 2 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Multilayer structure for reducing film roughness in magnetic devices8 Jul 2025US 12,356,865 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistive sensor and manufacturing method thereof18 Mar 2025US 12,256,644 B2National Tsing Hua University
- System and method for skyrmion based logic device28 Jan 2025US 12,211,641 B1Ceremprphic, Inc.
- Magnetoresistive stack/structure and methods therefor5 Nov 2024US 12,137,616 B2Everspin Technologies, Inc.
- Magnetoresistive sensors and methods for generating closed flux magnetization patterns17 Oct 2023US 11,789,097 B2Infineon Technologies AG
- Method for manufacturing magnetic laminated body and magnetic sensor, and apparatus for manufacturing magnetic laminated body7 May 2026US 2026/0128202 A1TDK Corporation
- Multilayer Structure for Reducing Film Roughness in Magnetic Devices30 Oct 2025US 2025/0338775 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for adjusting the magnetization in at least one region of a semiconductor device2 Jan 2025US 2025/0006426 A1
- A method for fabricating a magnetic spin valve device comprising ferromagnetic layers with non-collinear magnetizations12 Dec 2024US 2024/0415023 A1
- Magnetoresistive sensor and manufacturing method thereof8 Jun 2023US 2023/0176149 A1National Tsing Hua University
Most cited
By later US patents
- Spin transfer magnetic element having low saturation magnetization free layers160US 7,242,045 B2Grandis, Inc. · 2007
- Method for providing a magnetic recording transducer148US 8,381,391 B2Western Digital (Fremont), LLC · 2013
- Spin scattering and heat assisted switching of a magnetic element117US 7,126,202 B2Grandis, Inc. · 2006
- Magnetic tunnel junction element structures and methods for fabricating the same77US 7,098,495 B2Freescale Semiconducor, Inc. · 2006
- Low resistance tunneling magnetoresistive sensor with composite inner pinned layer71US 7,602,033 B2Headway Technologies, Inc. · 2009