Magnetoresistive sensors and methods for generating closed flux magnetization patterns
AssigneeInfineon Technologies AG
InventorsDirk Hammerschmidt, Armin Satz, Juergen Zimmer
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Abstract
A method for generating a closed flux magnetization pattern of a predetermined rotational direction in a magnetic reference layer of a magnetic layer stack is provided. The method includes applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of a pinned layer of the magnetic layer stack; and reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.
Claims22
A method for generating closed flux magnetization patterns of predetermined rotational directions in a magnetic reference layer and a pinned layer of a magnetic layer stack, the method comprising:
- applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of the pinned layer of the magnetic layer stack;
- and
- reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.
A method for manufacturing a magnetoresistive sensor that includes a magnetic layer stack comprising a magnetic reference layer, a pinned layer, and a magnetic free layer, the method comprising:
- generating a closed flux magnetization pattern of a predetermined rotational direction in the magnetic reference layer;
- and
- forming the magnetic free layer on the magnetic reference layer, wherein the magnetic free layer has a total lateral area that is smaller than a total lateral area of the magnetic reference layer, and wherein a centroid of the magnetic free layer is laterally displaced with respect to a centroid of the magnetic reference layer.
Dependencies are inferred from the claim text.