Spin scattering and heat assisted switching of a magnetic element
AssigneeGrandis, Inc.
InventorsYiming Huai, Mahendra Pakala
Life of this patent
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Abstract
A method and system for providing a magnetic element is disclosed. The magnetic element include providing a pinned layer, a spacer layer, and a free layer. The method and system also include providing a heat assisted switching layer and a spin scattering layer between the free layer and the heat assisted switching layer. The spin scattering layer is configured to more strongly scatter majority electrons than minority electrons. The heat assisted switching layer is for improving a thermal stability of the free layer when the free layer is not being switched. Moreover, the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
Claims19
A magnetic element comprising:
- a pinned layer;
- a spacer layer, the spacer layer being nonmagnetic;
- a free layer, the spacer layer residing between the pinned layer and the free layer;
- a spin scattering layer, the free layer residing between the spin scattering layer and the spacer layer, the spin scattering layer being configured to more strongly scatter majority electrons than minority electrons;
- a heat assisted switching layer, the spin scattering layer residing between the free layer and the heat assisted switching layer, the heat assisted switching layer for improving a thermal stability of the free layer when the free layer is not being switched;
- wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
A magnetic element comprising:
- a pinned layer;
- a spacer layer, the spacer layer being nonmagnetic;
- a free layer, the spacer layer residing between the pinned layer and the free layer;
- a spin scattering layer, the free layer residing between the spin scattering layer and the spacer layer, the spin scattering layer including Ru and being not more than six Angstroms thick;
- a heat assisted switching layer including an antiferromagnet having a blocking temperature less than a temperature of the heat assisted switching layer when a write current is passed through the heat assisted switching layer, the spin scattering layer residing between the free layer and the heat assisted switching layer;
- wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when the write current is passed through the magnetic element.
A magnetic element comprising:
- a first pinned layer;
- a first spacer layer, the first spacer layer being nonmagnetic;
- a first free layer, the first spacer layer residing between the first pinned layer and the first free layer;
- a first spin scattering layer, the first free layer residing between the first spin scattering layer and the first spacer layer, the first spin scattering layer being configured to scatter first majority electrons from the first free layer more strongly than first minority electrons from the first free layer;
- a heat assisted switching layer, the first free layer residing between the first spacer layer and the heat assisted switching layer, the heat assisted switching layer for improving a thermal stability of the first free layer when the first free layer is not being switched, the heat assisted switching layer is at least two nanometers thick;
- a second spin scattering layer, the heat assisted switching layer residing between the first spin scattering layer and the second spin scattering layer;
- a second free layer, the second spin scattering layer residing between the heat assisted switching layer residing and the first free layer, the first free layer and the second free layer being magnetostatically coupled, the second spin scattering layer being configured to scatter second majority electrons from the second free layer more strongly than second minority electrons from the second free layer;
- a second spacer layer, the second spacer layer being nonmagnetic;
- a second pinned layer, the second spacer layer residing between the second free layer and the second pinned layer;
- wherein the magnetic element is configured to allow the first free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
Dependencies are inferred from the claim text.