Magnetic tunnel junction element structures and methods for fabricating the same

A magnetic tunnel junction element comprising:

• a synthetic antiferromagnet pinned structure comprising:
• a pinned ferromagnetic layer;
• a fixed ferromagnetic layer;
• and
• a non-magnetic coupling layer disposed between the pinned ferromagnetic layer and the fixed ferromagnetic layer, wherein the fixed ferromagnetic layer is antiferromagnetically coupled to the pinned ferromagnetic layer;
• an electrode stack comprising a free ferromagnetic layer;
• a tunnel barrier layer disposed between the synthetic antiferromagnet pinned structure and the first electrode stack;
• and
• a first interface layer disposed adjacent the tunnel barrier layer and a layer of amorphous material,
• wherein the first interface layer comprises a material having a spin polarization that is higher than the spin polarization of the layer of amorphous material.

A magnetic tunnel junction element comprising:

• a crystalline pinned ferromagnetic layer;
• an amorphous fixed ferromagnetic layer;
• and
• a first non-magnetic coupling layer disposed between the crystalline pinned ferromagnetic layer and the amorphous fixed ferromagnetic layer, wherein the amorphous fixed ferromagnetic layer is antiferromagnetically coupled to the crystalline pinned ferromagnetic layer, and wherein the first non-magnetic coupling layer comprises a modified surface;
• a free ferromagnetic layer,
• a tunnel barrier layer disposed between the amorphous fixed layer and the free ferromagnetic layer;
• and
• a first interface layer disposed between the tunnel barrier layer and a layer of amorphous material;
• wherein the first interface layer comprises a material having a spin polarization that is higher than the spin polarization of the layer of amorphous material.