H01F 10/3272
By use of anti-parallel coupled [apc] ferromagnetic layers
Official title: {by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets}
H01F10/3272 (By use of anti-parallel coupled [apc] ferromagnetic layers) appears on 955 US grants and 1,047 published applications in this corpus.
Search patents in H01F- Granted patents
- 955
- Published applications
- 1,047
- Assignees
- 173
- Inventors
- 1,124
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 10 | 10 |
| 2002 | 10 | 20 |
| 2003 | 10 | 29 |
| 2004 | 34 | 43 |
| 2005 | 36 | 69 |
| 2006 | 49 | 66 |
| 2007 | 36 | 52 |
| 2008 | 41 | 73 |
| 2009 | 44 | 55 |
| 2010 | 42 | 56 |
| 2011 | 63 | 37 |
| 2012 | 61 | 38 |
| 2013 | 59 | 39 |
| 2014 | 36 | 29 |
| 2015 | 32 | 24 |
| 2016 | 25 | 21 |
| 2017 | 20 | 20 |
| 2018 | 18 | 35 |
| 2019 | 53 | 71 |
| 2020 | 55 | 75 |
| 2021 | 48 | 56 |
| 2022 | 54 | 38 |
| 2023 | 37 | 31 |
| 2024 | 32 | 28 |
| 2025 | 32 | 25 |
| 2026 | 11 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Microelectronic assembly having antiferromagnetic film structure therein22 Sep 2026US 12,745,648 B2Intel Corporation
- Magnetic memory devices having a low switching voltage4 Aug 2026US 12,701,925 B2Northwestern University
- Light detection element, receiving device, and light sensor device26 May 2026US 12,641,914 B2TDK Corporation
- Low Magnetostriction Material For Read Sensors20 Aug 2026US 2026/0245777 A1Western Digital Technologies, Inc.
- Magnetoresistive effect element and magnetic memory device23 Jul 2026US 2026/0215162 A1
- Method for manufacturing magnetic laminated body and magnetic sensor, and apparatus for manufacturing magnetic laminated body7 May 2026US 2026/0128202 A1TDK Corporation
- Current-induced synthetic antiferromagnetic spin-orbit torque structure with an oxide spacer7 May 2026US 2026/0130118 A1Powerchip Semiconductor Manufacturing Corporation
- Magnetic tunneling junction with synthetic free layer for sot-mram7 May 2026US 2026/0130121 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers255US 6,166,948 AInternational Business Machines Corporation · 2000
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor215US 5,583,725 AInternational Business Machines Corporation · 1996
- Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element213US 6,838,740 B2Grandis, Inc. · 2005