Current-induced synthetic antiferromagnetic spin-orbit torque structure with an oxide spacer
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsYuan-Chieh Tseng, Yu-Hsin Huang
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Abstract
A spin-orbit torque (SOT) magnetic device with synthetic antiferromagnetic (SAF) structure, including a SOT layer for providing a spin current, a SAF structure composed of a first ferromagnetic layer, a nickel oxide (NiO) exchange coupling layer and a second ferromagnetic layer, and a capping layer on the SAF structure. This magnetoelectric device of oxide SAF structure can achieve zero-field switching through current-induced SOT, and can be used as the free layer of a magnetoresistive random access memory (MRAM).
Claims6
A spin-orbit torque magnetic device having a synthetic antiferromagnetic structure, comprising:
- a spin-orbit torque layer, with both ends respectively connected to a first lower electrode and a second lower electrode to provide a spin current flowing through said spin-orbit torque layer;
- a synthetic antiferromagnetic structure, formed by stacking a first ferromagnetic layer, a nickel oxide exchange coupling layer and a second ferromagnetic layer, wherein both sides of said first ferromagnetic layer are respectively and directly connected with said spin-orbit torque layer and said nickel oxide exchange coupling layer, and both sides of said nickel oxide exchange coupling layer are respectively and directly connected with said first ferromagnetic layer and said second ferromagnetic layer, and both sides of said second ferromagnetic layer are respectively and directly connected with said nickel oxide exchange coupling layer and a capping layer;
- and
- said capping layer, in direct contact with said second ferromagnetic layer.
Dependencies are inferred from the claim text.