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US 2026/0215162 A1Published application
Magnetoresistive effect element and magnetic memory device
OwnerKenji NOMAinventor
Life of this patent
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Abstract
A magnetoresistive effect element includes a first antiferromagnetic layer, a second antiferromagnetic layer, a free magnetization layer provided between the first antiferromagnetic layer and the second antiferromagnetic layer, a tunnel barrier layer provided between the free magnetization layer and the second antiferromagnetic layer, a first fixed magnetization layer provided between the tunnel barrier layer and the second antiferromagnetic layer, an antiparallel coupling layer provided between the first fixed magnetization layer and the second antiferromagnetic layer, and a second fixed magnetization layer provided between the antiparallel coupling layer and the second antiferromagnetic layer.
Claims10
A magnetoresistive effect element comprising:
- a first antiferromagnetic layer;
- a second antiferromagnetic layer;
- a free magnetization layer provided between the first antiferromagnetic layer and the second antiferromagnetic layer;
- a tunnel barrier layer provided between the free magnetization layer and the second antiferromagnetic layer;
- a first fixed magnetization layer provided between the tunnel barrier layer and the second antiferromagnetic layer;
- an antiparallel coupling layer provided between the first fixed magnetization layer and the second antiferromagnetic layer;
- and
- a second fixed magnetization layer provided between the antiparallel coupling layer and the second antiferromagnetic layer, wherein
- an angle of a direction of an exchange coupling magnetic field of the first antiferromagnetic layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to a film surface of the free magnetization layer,
- an angle of a direction of an exchange coupling magnetic field of the second antiferromagnetic layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to the film surface of the free magnetization layer,
- an angle of a direction of magnetic anisotropy of the first fixed magnetization layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to the film surface of the free magnetization layer, and
- an angle of a direction of magnetic anisotropy of the second fixed magnetization layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to the film surface of the free magnetization layer.
9 more elements
A magnetic memory device comprising:
- a magnetoresistive effect element;
- a voltage application device;
- and
- a transistor electrically connected to the magnetoresistive effect element and the voltage application device;
- wherein the magnetoresistive effect element comprises:
- a first antiferromagnetic layer;
- a second antiferromagnetic layer;
- a free magnetization layer provided between the first antiferromagnetic layer and the second antiferromagnetic layer;
- a tunnel barrier layer provided between the free magnetization layer and the second antiferromagnetic layer;
- a first fixed magnetization layer provided between the tunnel barrier layer and the second antiferromagnetic layer;
- an antiparallel coupling layer provided between the first fixed magnetization layer and the second antiferromagnetic layer;
- and
- a second fixed magnetization layer provided between the antiparallel coupling layer and the second antiferromagnetic layer, wherein
- an angle of a direction of an exchange coupling magnetic field of the first antiferromagnetic layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to a film surface of the free magnetization layer,
- an angle of a direction of an exchange coupling magnetic field of the second antiferromagnetic layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to the film surface of the free magnetization layer,
- an angle of a direction of magnetic anisotropy of the first fixed magnetization layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to the film surface of the free magnetization layer, and
- an angle of a direction of magnetic anisotropy of the second fixed magnetization layer is equal to or greater than 76 degrees and equal to or less than 86 degrees with respect to the film surface of the free magnetization layer.
14 more elements
Dependencies are inferred from the claim text.