Microelectronic assembly having antiferromagnetic film structure therein

A microelectronic assembly including:

• a microelectronic structure including:
• a core layer including an electrically non-conductive material;
• electrically conductive through core vias (TCVs) extending through the core layer;
• a build-up layer on the core layer and electrically coupled to the TCVs;
• electrical contacts at a surface of the microelectronic structure;
• and
• a magnetic inductor (MI) within at least one of the core layer or the build-up layer and including an antiferromagnetic (AF) structure, the AF structure including:
• a first ferromagnetic (FM) layer including a first FM material;
• an exchange coupling (EC) layer on the first FM layer and including a non-magnetic metal material;
• a second FM layer on the EC layer and including a second FM material, the EC layer between the first FM layer and the second FM layer;
• and
• a pinning (P) layer including manganese and at least one of platinum or iridium, the second FM layer between the EC layer and the Player;
• and
• a die electrically coupled to at least some of the electrical contacts.

An integrated circuit (IC) device assembly including:

• a printed circuit board;
• and
• a microelectronic assembly electrically coupled to the printed circuit board and including:
• a microelectronic structure including:
• a core layer including an electrically non-conductive material;
• electrically conductive through core vias (TCVs) extending through the core layer;
• a build-up layer on the core layer and electrically coupled to the TCVs;
• electrical contacts at a surface of the microelectronic structure;
• and
• a magnetic inductor (MI) within at least one of the core layer or the build-up layer and including an antiferromagnetic (AF) structure, the AF structure including:
• a first ferromagnetic (FM) layer including a first FM material;
• an exchange coupling (EC) layer on the first FM layer and including a non-magnetic metal material;
• a second FM layer on the EC layer and including a second FM material, the EC layer between the first FM layer and the second FM layer;
• and
• a pinning (P) layer including manganese and at least one of platinum or iridium, the second FM layer between the EC layer and the Player;
• and
• a die electrically coupled to at least some of the electrical contacts of the microelectronic structure.

A method to fabricate a microelectronic structure, comprising:

• providing a core layer including an electrically non-conductive material;
• providing electrically conductive through core vias (TCVs) extending through the core layer;
• providing a first dielectric sublayer on the core layer;
• providing electrically conductive structures on the first dielectric sublayer;
• providing a second dielectric sublayer on the first dielectric sublayer and on the electrically conductive structures;
• and
• providing a magnetic inductor (MI) one of within the core layer or on the core layer, the MI including an antiferromagnetic (AF) structure including:
• providing, on a material of the core layer, a pinning (P) layer including manganese and at least one of platinum or iridium;
• providing a second ferromagnetic (FM) layer including a second FM material on the P layer;
• providing an exchange coupling (EC) layer on the second FM layer, the EC layer including a non-magnetic metal material;
• and
• providing a first FM layer including a first FM material on the EC layer, wherein the EC layer is between the first FM layer and the second FM layer, and the second FM layer is between the Player and the EC layer.