H01F 10/3277
By use of artificial ferrimagnets [afi] only
Official title: {by use of artificial ferrimagnets [AFI] only}
H01F10/3277 (By use of artificial ferrimagnets [afi] only) appears on 36 US grants and 45 published applications in this corpus.
Search patents in H01F- Granted patents
- 36
- Published applications
- 45
- Assignees
- 20
- Inventors
- 86
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 2 |
| 2003 | 1 | 4 |
| 2004 | 2 | 5 |
| 2005 | 3 | 7 |
| 2006 | 5 | 6 |
| 2007 | 2 | 3 |
| 2008 | 4 | 5 |
| 2009 | 4 | 2 |
| 2010 | 3 | 4 |
| 2011 | 2 | 2 |
| 2012 | 6 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 1 |
| 2017 | 1 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 1 |
| 2025 | 0 | 0 |
| 2026 | 1 | 0 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Superparamagnetic tunnel junction element and computing system7 Apr 2026US 12,597,547 B2Tohoku University
- Logic computing9 May 2023US 11,647,679 B2Fudan University
- Magnetic memory element and memory device14 Nov 2017US 9,818,464 B2Kabushiki Kaisha Toshiba
- Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field29 Sep 2015US 9,147,408 B1Western Digital (Fremont), LLC
- Magnetic tunnel junction structure having free layer with oblique magnetization25 Dec 2012US 8,338,004 B2Korea Institute of Science and Technology
- Superparamagnetic tunnel junction element and computing system27 Jun 2024US 2024/0212907 A1Tohoku University
- Logic computing25 Nov 2021US 2021/0367141 A1Fudan University
- Logic computing13 Feb 2020US 2020/0051725 A1Fudan University
- Magnetic memory element and memory device29 Dec 2016US 2016/0379698 A1Kabushiki Kaisha Toshiba
- Heated afm layer deposition and cooling process for tmr magnetic recording sensor with high pinning field31 Dec 2015US 2015/0380026 A1Western Digital (Fremont), LLC
Most cited
By later US patents
- Magnetic tunnel junction structure having free layer with oblique magnetization46US 8,338,004 B2Korea Institute of Science and Technology · 2012
- Magnetic memory device and method33US 6,850,433 B2Hewlett-Packard Development Company, L. P. · 2005
- Magnetoresistive effect element and magnetic memory device25US 7,315,053 B2Sony Corporation · 2008
- Spin-torque oscillator, a magnetic sensor and a magnetic recording system19US 8,174,798 B2Kabushiki Kaisha Toshiba · 2012
- Magnetoresistive effect device and magnetic memory19US 8,223,533 B2Kabushiki Kaisha Toshiba · 2012