Magnetic memory device and method
AssigneeHewlett-Packard Development Company, L.P.
InventorsManish Sharma, Lung The Tran
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Abstract
A magnetic memory device can include a synthetic ferrimagnetic data, a soft reference layer and a tunneling layer. The synthetic ferrimagnetic data layer has a magnetic moment directable to a first orientation and a second orientation. The soft reference layer has a lower coercivity than the synthetic ferrimagnetic data layer. The tunneling layer has electrical resistance qualities which are influenced by magnetic moment orientations of the synthetic ferrimagnetic data layer and the soft reference layer.
Claims24
A magnetic memory device comprising:
- a synthetic ferrimagnetic data layer having a magnetic moment directable to a first orientation and a second orientation;
- a soft reference layer with a lower coercivity than said synthetic ferrimagnetic data layer;
- and
- a tunneling layer having electrical resistance qualities which are influenced by magnetic moment orientations of said synthetic ferrimagnetic data layer and said soft reference layer.
A magnetic memory device comprising:
- a synthetic ferrimagnetic sense layer operable for magnetization in either of two discernable states;
- a soft reference layer that changes magnetization orientation easier than said synthetic ferrimagnetic data layer;
- and
- a resistance layer that resists electrical current, wherein resistance to said electrical current changes depending upon the relative direction of said a first orientation and a second orientation.
A magnetic memory system comprising:
- an array of magnetic storage cells, wherein said storage cells include a synthetic ferrimagnetic data layer and a soft reference layer;
- a plurality of first electrically conductive elements extending along said array in a first direction, said plurality of first electrically conductive elements magnetically coupled to said storage cells;
- and
- a plurality of second electrically conductive elements extending along said array in a second direction, said plurality of second electrically conductive elements magnetically coupled to said storage cells.
A magnetic memory device comprising:
- a means for establishing a first magnetic moment orientation in a synthetic ferrimagnetic data layer, wherein said first magnetic orientation is the sum effect of multiple magnetic moments in sub-layers;
- a means for establishing a second magnetic moment orientation that is softer than said first magnetic moment orientation;
- and
- a means for resisting a current flow, wherein resistance to said current flow is altered according to the direction of said magnetic moment orientations.
Dependencies are inferred from the claim text.