Magnetoresistive effect device and magnetic memory

A magnetic memory comprising a memory cell,

• the memory cell comprising:
• a magnetoresistive effect device;
• and
• a first electrode and a second electrode that flow a current to the magnetoresistive effect device,
• the magnetoresistive effect device comprising:
• a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof;
• a first nonmagnetic layer that is provided on the first ferromagnetic layer;
• a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane;
• a second nonmagnetic layer that is provided on the first reference layer;
• and
• a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.