Magnetic memory element and memory device

A memory device, comprising:

• a magnetic memory element:
• and
• a controller electrically connected to the magnetic memory element,
• wherein the magnetic memory element comprises:
• a stacked structure, comprising:
• a first stacked member, comprising:
• a first ferromagnetic layer,
• a second ferromagnetic layer, and
• a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
• a magnetic resonance frequency of the second ferromagnetic layer being a first frequency, a direction of a magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member along a first direction connecting the first ferromagnetic layer and the second ferromagnetic layer, the direction of the magnetization of the second ferromagnetic layer not changing to a direction corresponding to an orientation of a second current smaller than the first current when the second current flows in the first stacked member, and
• a second stacked member stacked with the first stacked member along the first direction, the second stacked member including a third ferromagnetic layer, a magnetization of the third ferromagnetic layer being able to generate a magnetic field of the first frequency by the second current flowing in the second stacked member along the first direction,
• the direction of the magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a current by causing the current to flow in the first stacked member and the second stacked member along the first direction to generate a magnetic field acting on the second ferromagnetic layer,
• the controller causing a current to flow in the second stacked member without causing a current to flow in the first stacked member in a programming operation of programming data to the magnetic memory element, and
• the controller causing a current to flow in the first stacked member without causing a current to flow in the second stacked member in a read-out operation of reading the data retained in the magnetic memory element.

A memory device, comprising:

• a magnetic memory element;
• and
• a controller electrically connected to the magnetic memory element,
• wherein the magnetic memory element comprises:
• a stacked structure, comprising:
• a first stacked member, comprising:
• a first ferromagnetic layer,
• a second ferromagnetic layer. and
• a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
• a magnetic resonance frequency of the second ferromagnetic layer being a first frequency, a direction of a magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member along a first direction connecting the first ferromagnetic layer and the second ferromagnetic layer, the direction of the magnetization of the second ferromagnetic layer not changing to a direction corresponding to an orientation of a second current smaller than the first current when the second current flows in the first stacked member, and
• a second stacked member stacked with the first stacked member along the first direction, the second stacked member including a third ferromagnetic layer, a magnetization of the third ferromagnetic layer being able to generate a magnetic field of the first frequency by the second current flowing in the second stacked member along the first direction,
• the direction of the magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a current by causing the current to flow in the first stacked member and the second stacked member along the first direction to generate a magnetic field acting on the second ferromagnetic layer,
• the controller causing a larger current to flow in the second stacked member than in the first stacked member in a programming operation of programming data to the magnetic memory element, and
• the controller causing a larger current to flow in the second stacked member than in the first stacked member in a read-out operation of reading the data retained in the magnetic memory element.

A memory device, comprising:

• a magnetic memory element;
• and
• a controller electrically connected to the magnetic memory element,
• wherein the magnetic memory element comprises:
• a stacked structure, comprising
• a first stacked member including
• a first ferromagnetic layer,
• a second ferromagnetic layer, and
• a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
• a magnetic resonance frequency of the second ferromagnetic layer being a first frequency, a direction of a magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member along a first direction connecting the first ferromagnetic layer and the second ferromagnetic layer, the direction of the magnetization of the second ferromagnetic layer not changing to a direction corresponding to an orientation of a second current smaller than the first current when the second current flows in the first stacked member, and
• a second stacked member stacked with the first stacked member along the first direction, the second stacked member including a third ferromagnetic layer, a magnetization of the third ferromagnetic layer being able to generate a magnetic field of the first frequency by the second current flowing in the second stacked member along the first direction.
• the direction of the magnetization of the second ferromagnetic layer being settable to a direction corresponding to an orientation of a current by causing the current to flow in the first stacked member and the second stacked member along the first direction to generate a magnetic field acting on the second ferromagnetic layer.
• the controller causing a current to flow in the second stacked member without causing a current to flow in the first stacked member in a programming operation of programming data to the magnetic memory element, and
• the controller causing a current to flow in the second stacked member without causing a current to flow in the first stacked member in a read-out operation of reading the data retained in the magnetic memory element.