H01F 10/3268
The exchange coupling being asymmetric
Official title: {the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn}
H01F10/3268 (The exchange coupling being asymmetric) appears on 1,635 US grants and 1,558 published applications in this corpus.
Search patents in H01F- Granted patents
- 1,635
- Published applications
- 1,558
- Assignees
- 274
- Inventors
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- Latest grant
- 6 Oct 2026
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By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
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- Microelectronic assembly having antiferromagnetic film structure therein22 Sep 2026US 12,745,648 B2Intel Corporation
- Method to calculate performance of a magnetic element comprising a ferromagnetic layer exchange-coupled to an antiferromagnetic layer25 Aug 2026US 12,716,970 B2Allegro MicroSystems, LLC
- Low Magnetostriction Material For Read Sensors20 Aug 2026US 2026/0245777 A1Western Digital Technologies, Inc.
- Magnetoresistive effect element and magnetic memory device23 Jul 2026US 2026/0215162 A1
- Method for manufacturing magnetic laminated body and magnetic sensor, and apparatus for manufacturing magnetic laminated body7 May 2026US 2026/0128202 A1TDK Corporation
- Current-induced synthetic antiferromagnetic spin-orbit torque structure with an oxide spacer7 May 2026US 2026/0130118 A1Powerchip Semiconductor Manufacturing Corporation
- Magnetic tunneling junction with synthetic free layer for sot-mram7 May 2026US 2026/0130121 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers255US 6,166,948 AInternational Business Machines Corporation · 2000
- Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device243US 6,532,164 B2Commissariat A L' Energie Atomique · 2003
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer230US 6,222,707 B1Read-Rite Corporation · 2001