H01F 10/3281
Only by use of asymmetry of the magnetic film pair itself, i.e.
Official title: {only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co}
H01F10/3281 (Only by use of asymmetry of the magnetic film pair itself, i.e.) appears on 126 US grants and 102 published applications in this corpus.
Search patents in H01F- Granted patents
- 126
- Published applications
- 102
- Assignees
- 57
- Inventors
- 175
- Latest grant
- 12 Jul 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 7 | 0 |
| 2001 | 0 | 2 |
| 2002 | 1 | 8 |
| 2003 | 8 | 7 |
| 2004 | 5 | 3 |
| 2005 | 2 | 8 |
| 2006 | 8 | 21 |
| 2007 | 9 | 19 |
| 2008 | 10 | 6 |
| 2009 | 15 | 4 |
| 2010 | 10 | 7 |
| 2011 | 9 | 4 |
| 2012 | 6 | 2 |
| 2013 | 1 | 1 |
| 2014 | 2 | 1 |
| 2015 | 2 | 0 |
| 2016 | 0 | 1 |
| 2017 | 1 | 0 |
| 2018 | 0 | 2 |
| 2019 | 2 | 1 |
| 2020 | 1 | 2 |
| 2021 | 2 | 2 |
| 2022 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Spin-orbit-torque magnetization rotational element and spin-orbit-torque magnetoresistance effect element12 Jul 2022US 11,387,407 B2TDK Corporation
- Narrow etched gaps or features in multi-period thin-film structures11 Jan 2022US 11,222,676 B2Integrated Magnetoelectronics Corporation
- Spin-orbit torque magnetoresistance effect element and magnetic memory28 Dec 2021US 11,211,552 B2TDK Corporation
- Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal20 Jul 2021US 11,069,390 B2Wisconsin Alumni Research Foundation
- Narrow etched gaps or features in multi-period thin-film structures1 Sep 2020US 10,762,940 B2Integrated Magnetoelectronics Corporation
- Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets23 Jun 2022US 2022/0199310 A1Georgetown University
- Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal11 Mar 2021US 2021/0074344 A1Wisconsin Alumni Research Foundation
- Spin-orbit torque magnetoresistance effect element and magnetic memory14 Jan 2021US 2021/0013398 A1TDK Corporation
- Narrow etched gaps or features in multi-period thin-film structures5 Nov 2020US 2020/0349992 A1Integrated Magnetoelectronics Corporation
- Spin-orbit-torque magnetization rotational element and spin-orbit-torque magnetoresistance effect element22 Oct 2020US 2020/0335691 A1TDK Corporation
Most cited
By later US patents
- Magnetoresistive sensor based on the spin valve effect201US 5,159,513 AInternational Business Machines Corporation · 1992
- MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements134US 7,241,631 B2Grandis, Inc. · 2007
- Magnetoresistive element and magnetic memory device118US 6,611,405 B1Kabushiki Kaisha Toshiba · 2003
- Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements101US 7,489,541 B2Grandis, Inc. · 2009
- Giant magnetoresistive sensor74US 6,002,553 AThe United States of America as represented by the United States Department of Energy · 1999