Spin-orbit-torque magnetization rotational element and spin-orbit-torque magnetoresistance effect element

A spin-orbit-torque magnetization rotational element, comprising:

• a first ferromagnetic layer;
• and
• spin-orbit-torque wiring, the first ferromagnetic layer being laminated on the spin-orbit-torque wiring in a first direction, the spin-orbit-torque wiring including:
• a first region extending in a second direction;
• a second region extending in a third direction different from the second direction;
• and
• an intersection region where the first region and the second region intersect, the first ferromagnetic layer and the intersection region at least partially overlapping in a plan view from the first direction,
• wherein a center-of-gravity position of the intersection region is different from a center-of-gravity position of the first ferromagnetic layer in the plan view from the first direction, and
• the center-of-gravity position of the intersection region is positioned closer to the first region than the center-of-gravity position of the first ferromagnetic layer.

A spin-orbit-torque magnetoresistance effect element comprising:

• a first ferromagnetic layer having a variable magnetization direction;
• a second ferromagnetic layer having a substantially fixed magnetization direction;
• a nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer;
• and
• spin-orbit-torque wiring, the first ferromagnetic layer being laminated on the spin-orbit-torque wiring in a first direction, the spin-orbit-torque wiring including:
• a first region extending in a second direction;
• and
• a second region extending in a third direction different from the second direction,
• wherein the spin-orbit-torque magnetoresistance effect element is configured so that, in a plan view from the first direction, a writing current of the spin-orbit-torque magnetoresistance effect element is applied in the second direction of the spin-orbit-torque wiring and a reading current of the spin-orbit-torque magnetoresistance effect element is applied in the third direction of the spin-orbit-torque magnetoresistance effect element and the spin-orbit-torque wiring, and
• lengths of the first ferromagnetic layer and the second ferromagnetic layer in the third direction are longer than lengths of the first ferromagnetic layer and the second ferromagnetic layer in the second direction.

A spin-orbit-torque magnetoresistance effect element comprising:

• a first ferromagnetic layer having a variable magnetization direction;
• a second ferromagnetic layer having a substantially fixed magnetization direction;
• a nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer;
• and
• spin-orbit-torque wiring, the first ferromagnetic layer being laminated on the spin-orbit-torque wiring in a first direction, the spin-orbit-torque wiring including:
• a first region extending in a second direction;
• and
• a second region extending in a third direction different from the second direction,
• wherein the spin-orbit-torque magnetoresistance effect element is configured so that, in a plan view from the first direction, a writing current of the spin-orbit-torque magnetoresistance effect element is applied in the second direction of the spin-orbit-torque wiring and a reading current of the spin-orbit-torque magnetoresistance effect element is applied in the third direction of the spin-orbit-torque magnetoresistance effect element and the spin-orbit-torque wiring, and
• lengths of the first ferromagnetic layer and the second ferromagnetic layer in the second direction are longer than lengths of the first ferromagnetic layer and the second ferromagnetic layer in the third direction.