G11C 2213/17
Memory cell being a nanowire transistor
G11C2213/17 (Memory cell being a nanowire transistor) appears on 147 US grants and 160 published applications in this corpus.
Search patents in G11C- Granted patents
- 147
- Published applications
- 160
- Assignees
- 54
- Inventors
- 247
- Latest grant
- 18 Mar 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 4 | 7 |
| 2003 | 4 | 9 |
| 2004 | 7 | 8 |
| 2005 | 3 | 29 |
| 2006 | 18 | 13 |
| 2007 | 17 | 19 |
| 2008 | 9 | 14 |
| 2009 | 19 | 15 |
| 2010 | 20 | 17 |
| 2011 | 10 | 4 |
| 2012 | 5 | 2 |
| 2013 | 4 | 4 |
| 2014 | 4 | 1 |
| 2015 | 2 | 2 |
| 2016 | 2 | 0 |
| 2017 | 4 | 3 |
| 2018 | 3 | 6 |
| 2019 | 4 | 3 |
| 2020 | 3 | 0 |
| 2021 | 3 | 1 |
| 2022 | 0 | 3 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
By publication year.
Recent patents
- Product-sum calculation unit, neuromorphic device, and product-sum calculation method18 Mar 2025US 12,254,396 B2TDK Corporation
- Differential ionic electronic transistors5 Mar 2024US 11,925,128 B2Robert Bosch GmbH
- Resistive element for PCM RPU by trench depth patterning28 Dec 2021US 11,211,556 B1International Business Machines Corporation
- Nonvolatile memory cells having an embedded selection element and nonvolatile memory cell arrays including the nonvolatile memory cells21 Sep 2021US 11,127,897 B2SK hynix Inc.
- Ion-based nanoelectric memory6 Jul 2021US 11,056,647 B2The Aerospace Corporation
- Differential ionic electronic transistors3 Mar 2022US 2022/0069206 A1Robert Bosch GmbH
- Resistive Element for PCM RPU by Trench Depth Patterning20 Jan 2022US 2022/0020922 A1International Business Machines Corporation
- Product-sum calculation unit, neuromorphic device, and product-sum calculation method6 Jan 2022US 2022/0004853 A1TDK Corporation
- Nonvolatile memory cells having an embedded selection element and nonvolatile memory cell arrays including the nonvolatile memory cells4 Mar 2021US 2021/0066585 A1SK hynix Inc.
- Enhancing Memory Yield and Performance Through Utilizing Nanowire Self-Heating21 Nov 2019US 2019/0355437 A1Synopsys, Inc.
Most cited
By later US patents
- Methodology for electrically induced selective breakdown of nanotubes291US 6,423,583 B1International Business Machines Corporation · 2002
- Micromechanical memory element280US 6,625,047 B2Texas Instruments Incorporated · 2003
- Nanosensors247US 7,129,554 B2President and Fellows of Harvard College · 2006
- Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method242US 6,515,339 B2LG Electronics Inc. · 2003
- Molecular wire transistor (MWT)154US 6,559,468 B1Hewlett-Packard Development Company, L. P. · 2003