Micromechanical memory element
AssigneeTexas Instruments Incorporated
InventorDonald J. Coleman, Jr.
Life of this patent
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AssigneeTexas Instruments Incorporated
InventorDonald J. Coleman, Jr.
Estimating the term…
A micromechanical memory 100 element comprising a deflectable member 102 located between a first member 104 and a second member 106. The first member 104 is biased at a first member voltage, and the second member 106 is biased at a second member voltage. A bias voltage applied to the deflectable member will drive the deflectable member to either the first member 104 or the second member 106. A first contact 108 is positioned on the top, or end, of the first member 104. A second contact 110 is positioned on the top, or end, of the second member 106. These contacts are biased through resistors 112 and 114 with a first and second contact voltage sufficient to hold the deflectable member in place even after removal of the bias voltage applied to the deflectable member. The state of the micromechanical memory element can be determined by sensing the voltage of the deflectable member 102.
A micromechanical memory element comprising:
A micromechanical memory element comprising:
A micromechanical memory element comprising:
A method of forming a micromechanical memory element, the method comprising:
Dependencies are inferred from the claim text.