Differential ionic electronic transistors
AssigneeRobert Bosch GmbH
InventorsLei Cheng, Thomas Rocznik
Life of this patent
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Abstract
An ionic transistor including a first source, a first drain spaced apart from the first source, and a first storage layer electrically connected to the first source and the first drain. The ionic transistor also includes a second source spaced apart from the first source, a second drain spaced apart from the second source, and a second storage layer electrically connected to the second source and the second drain. The ionic transistor further includes an electrolyte layer situated between and electrically connected to the first and second storage layers. The ionic transistor may be implemented as non-volatile memory in a machine learning (ML) application.
Claims20
An ionic transistor comprising:
- a first source;
- a first drain spaced apart from the first source;
- a first storage layer electrically connected to the first source and drain;
- a second source spaced apart from the first source;
- a second drain spaced apart from the second source;
- a second storage layer electrically connected to the second source and drain;
- and
- an electrolyte layer situated between and electrically connected to the first and second storage layers, the first and/or second storage layers include a sodium ionic conductor including a Na—V—P—O compound, a Na—Zr—Si—P—O compound, a Na—Ti—O compound or a combination thereof.
An ionic transistor comprising:
- a first source;
- a first drain spaced apart from the first source;
- a first storage layer electrically connected to the first source and drain;
- a second source spaced apart from the first source;
- a second drain spaced apart from the second source;
- a second storage layer electrically connected to the second source and drain;
- and
- an electrolyte layer situated between and electrically connected to the first and second storage layers, the first and/or second storage layers include an oxygen ionic conductor including an ABO3 perovskite cubic structured material or a binary transition metal oxide.
An ionic transistor comprising:
- a first source;
- a first drain spaced apart from the first source;
- a first storage layer electrically connected to the first source and drain;
- a second source spaced apart from the first source;
- a second drain spaced apart from the second source;
- a second storage layer electrically connected to the second source and drain;
- and
- an electrolyte layer situated between and electrically connected to the first and second storage layers, the electrolyte layer includes an oxygen ionic conductor including Y0.16Zr0.92O2.
An ionic transistor comprising:
- a first source;
- a first drain spaced apart from the first source;
- a first storage layer electrically connected to the first source and drain;
- a second source spaced apart from the first source;
- a second drain spaced apart from the second source;
- a second storage layer electrically connected to the second source and drain;
- an electrolyte layer situated between and electrically connected to the first and second storage layers, the first drain, source and storage layer and the second drain, source and storage layer form a first substantially planar layer and a second substantially planar layer, respectively, the electrolyte layer is a substantially planar electrolyte layer separating the first and second substantially planar layers from each other;
- and
- a first coating layer situated between the first substantially planar layer and the substantially planar electrode layer and/or a second coating layer situated between the second substantially planar layer and the substantially planar electrolyte layer.
Dependencies are inferred from the claim text.