G11C 2211/565
Multilevel memory comprising elements in triple well structure
G11C2211/565 (Multilevel memory comprising elements in triple well structure) appears on 99 US grants and 86 published applications in this corpus.
Search patents in G11C- Granted patents
- 99
- Published applications
- 86
- Assignees
- 26
- Inventors
- 91
- Latest grant
- 25 Jun 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 7 | 2 |
| 2002 | 4 | 4 |
| 2003 | 3 | 12 |
| 2004 | 9 | 7 |
| 2005 | 7 | 3 |
| 2006 | 1 | 2 |
| 2007 | 5 | 13 |
| 2008 | 10 | 10 |
| 2009 | 11 | 13 |
| 2010 | 7 | 2 |
| 2011 | 6 | 6 |
| 2012 | 5 | 5 |
| 2013 | 6 | 2 |
| 2014 | 2 | 1 |
| 2015 | 0 | 1 |
| 2016 | 2 | 1 |
| 2017 | 0 | 1 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Non-volatile semiconductor memory device including application of different voltages to memory cells based on their proximity to a selected memory cell25 Jun 2024US RE50,025 E1Kioxia Corporation
- Non-volatile semiconductor memory device including application of different voltages to memory cells based on their proximity to a selected memory cell6 Oct 2020US RE48,244 E1Toshiba Memory Corporation
- Method for controlling a non-volatile semiconductor memory device6 Mar 2018US RE46,749 E1Toshiba Memory Corporation
- Three-dimensional memory structure having a back gate electrode31 May 2016US 9,355,727 B1SanDisk Technologies LLC
- Adaptive increase in control gate voltage of a dummy memory cell to compensate for inadvertent programming29 Mar 2016US 9,299,450 B1SanDisk Technologies LLC
- Three dimension memory device16 Mar 2023US 2023/0085583 A1Macronix International Co., Ltd.
- Nonvolatile semiconductor memory and method of controlling the nonvolatile semiconductor memory9 Mar 2017US 2017/0069387 A1Kabushiki Kaisha Toshiba
- Three-dimensional memory structure having a back gate electrode9 Jun 2016US 2016/0163389 A1SanDisk Technologies LLC
- Clock synchronized non-volatile memory device4 Jun 2015US 2015/0155049 A1S4, Inc.
- Use of High Endurance Non-Volatile Memory for Read Acceleration17 Apr 2014US 2014/0108705 A1SanDisk Technologies LLC
Most cited
By later US patents
- Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells274US 6,373,746 B1Kabushiki Kaisha Toshiba · 2002
- Clock synchronized non-volatile memory device240US 6,801,452 B2Renesas Technology Corp. · 2004
- Low voltage, low current hot-hole injection erase and hot-electron programmable flash memory with enhanced endurance126US 5,953,255 AAplus Flash Technology, Inc. · 1999
- Structure and method for low current programming of flash EEPROMS120US 5,487,033 AIntel Corporation · 1996
- Structure and method for low current programming of flash EEPROMs68US 5,553,020 AIntel Corporation · 1996