US 2023/0085583 A1Published application

Three dimension memory device

AssigneeMacronix International Co., Ltd.

InventorsYung-Feng Lin, Su-Chueh Lo, Teng-Hao Yeh, Hang-Ting Lue

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Abstract

A three dimension memory device, such as a three dimensional AND flash memory is provided. The three dimension memory device includes a plurality of memory arrays, a plurality of bit line switches, and a plurality of source line switches. The memory array has a plurality of memory cell rows respectively coupled to a plurality of source lines and bit lines. The bit line switches and the source line switches are respectively implemented by a plurality of first transistors and second transistors. The first transistors are coupled to a common bit line and the bit line. The second transistors are coupled to a common source line and the source lines. The first transistors are P-type transistors or an N-type transistors with a triple-well substrate, and the second transistors are P-type transistor or an N-type transistors with a triple-well substrate.

Claims20

Dependent claims

A three dimension memory device, comprising:

a plurality of memory arrays, wherein the memory arrays comprise a plurality of corresponding memory cell rows, and the memory cell rows are respectively coupled to a plurality of source lines and a plurality of bit lines;
a plurality of bit line switches respectively configured with a plurality of first transistors, wherein first ends of the first transistors are coupled to a common bit line, and second ends of the first transistors are respectively coupled to the bit lines;
and
a plurality of source line switches respectively configured with a plurality of second transistors, wherein first ends of the second transistors are coupled to a common source line, and second ends of the second transistors are respectively coupled to the source lines,
wherein the first transistors are P-type transistors or N-type transistors with a triple-well substrate, and the second transistors are P-type transistors or N-type transistors with a triple-well substrate.

2 more elements

Dependencies are inferred from the claim text.