G11C 2211/5645
Multilevel memory with current-mirror arrangements
G11C2211/5645 (Multilevel memory with current-mirror arrangements) appears on 90 US grants and 60 published applications in this corpus.
Search patents in G11C- Granted patents
- 90
- Published applications
- 60
- Assignees
- 47
- Inventors
- 116
- Latest grant
- 11 Apr 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 8 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 1 |
| 2002 | 3 | 2 |
| 2003 | 3 | 2 |
| 2004 | 0 | 2 |
| 2005 | 1 | 1 |
| 2006 | 1 | 6 |
| 2007 | 3 | 3 |
| 2008 | 3 | 7 |
| 2009 | 9 | 4 |
| 2010 | 2 | 4 |
| 2011 | 1 | 2 |
| 2012 | 3 | 3 |
| 2013 | 4 | 2 |
| 2014 | 3 | 6 |
| 2015 | 3 | 4 |
| 2016 | 4 | 5 |
| 2017 | 6 | 3 |
| 2018 | 1 | 0 |
| 2019 | 3 | 2 |
| 2020 | 1 | 0 |
| 2021 | 3 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Selection scheme for crosspoint memory11 Apr 2023US 11,626,161 B2Intel Corporation
- Selection scheme for crosspoint memory24 Aug 2021US 11,100,987 B1Intel Corporation
- Power line compensation for flash memory sense amplifiers8 Jun 2021US 11,031,050 B2Silicon Storage Technology, Inc.
- Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit9 Mar 2021US 10,943,656 B2Micron Technology, Inc.
- State change detection for two-terminal memory6 Oct 2020US 10,796,751 B1Crossbar, Inc.
- Selection scheme for crosspoint memory28 Oct 2021US 2021/0335419 A1Intel Corporation
- Power line compensation for flash memory sense amplifiers21 Nov 2019US 2019/0355420 A1Silicon Storage Technology, Inc.
- Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit7 Nov 2019US 2019/0341106 A1Micron Technology, Inc.
- Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit7 Dec 2017US 2017/0352417 A1Micron Technology, Inc.
- Nonvolatile memory apparatus4 May 2017US 2017/0125093 A1SK hynix Inc.
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state EEprom read and write circuits and techniques432US 5,163,021 ASunDisk Corporation · 1992
- Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells221US 5,712,815 AAdvanced Micro Devices, Inc. · 1998
- Memory with isolatable expandable bit lines211US 5,677,867 A1997
- Non-volatile memory with improved sensing and method therefor158US 6,044,019 ASanDisk Corporation · 2000