Back to results
US 2017/0125093 A1Published application
Nonvolatile memory apparatus
AssigneeSK hynix Inc.
InventorChulhyun PARK
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory apparatus includes a sensing voltage generation unit, a memory cell, a current copy unit and a data sensing unit. The sensing voltage generation unit provides a sensing voltage with a constant level, to a sensing node. The memory cell receives the sensing voltage from the sensing node. The current copy unit generates copied current with substantially the same magnitude as sensing current which flows through the memory cell. The data sensing unit senses the copied current and generates a multi-bit data output signal.
Claims6
A nonvolatile memory apparatus comprising:
- a memory cell;
- a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node;
- a column switch configured to connect one end of the memory cell with a sensing node in response to a bit line select signal;
- and
- a data sensing unit connected to the other end of the memory cell and configured to receive and sense sensing current which flows through the memory cell, from the other end of the memory cell in response to directly receiving a word line select signal, and generate a data output signal.
2 more elements
Dependencies are inferred from the claim text.