Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit

A memory device, comprising:

• memory cells each storing one or more logic states;
• and
• a voltage generator to generate a programming voltage for programming at least one of the memory cells, the voltage generator comprising:
• a modulator circuit to modulate the programming voltage, the modulator circuit comprising:
• a first transistor having a drain coupled with a second transistor having a drain to provide the programming voltage, wherein the modulator circuit is configured to
• provide a first active signal to a gate of the second transistor to short-circuit the modulator circuit, or
• provide a second active signal different than the first active signal to the gate of the second transistor to activate the modulator circuit.

A memory device, comprising:

• memory cells each storing one or more logic states;
• and
• a voltage generator to generate a programming voltage for programming at least one of the memory cells, the voltage generator comprising:
• a modulator circuit to modulate the programming voltage, the modulator circuit comprising:
• a first transistor having a drain coupled with a second transistor having a drain to provide the programming voltage;
• and
• a third transistor having a drain to provide the programming voltage and a fourth transistor having a source to provide a ground voltage.