G11C 2211/5631
Concurrent multilevel reading of more than one cell
G11C2211/5631 (Concurrent multilevel reading of more than one cell) appears on 87 US grants and 57 published applications in this corpus.
Search patents in G11C- Granted patents
- 87
- Published applications
- 57
- Assignees
- 31
- Inventors
- 123
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 1 | 0 |
| 1998 | 8 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 5 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 2 |
| 2006 | 1 | 2 |
| 2007 | 0 | 2 |
| 2008 | 3 | 4 |
| 2009 | 4 | 2 |
| 2010 | 3 | 1 |
| 2011 | 2 | 2 |
| 2012 | 1 | 2 |
| 2013 | 2 | 2 |
| 2014 | 1 | 2 |
| 2015 | 1 | 0 |
| 2016 | 0 | 2 |
| 2017 | 4 | 1 |
| 2018 | 1 | 0 |
| 2019 | 1 | 10 |
| 2020 | 9 | 5 |
| 2021 | 2 | 4 |
| 2022 | 4 | 6 |
| 2023 | 2 | 2 |
| 2024 | 4 | 1 |
| 2025 | 2 | 2 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Program verify pairing in a multi-level cell memory device11 Aug 2026US 12,706,163 B2Micron Technology, Inc.
- Firmware repair for three-dimensional NAND memory21 Oct 2025US 12,450,117 B2Yangtze Memory Technologies Co., Ltd.
- Soft read operations with progressive data output24 Jun 2025US 12,339,742 B2
- Memory system and operating method thereof19 Mar 2024US 11,934,271 B2SK hynix Inc.
- Asynchronous multi-plane independent scheme dynamic analog resource sharing in three-dimensional memory devices13 Feb 2024US 11,901,034 B2Yangtze Memory Technologies Co., Ltd.
- Firmware repair for three-dimensional nand memory29 Jan 2026US 2026/0030092 A1Yangtze Memory Technologies Co., Ltd.
- Soft read operations with progressive data output4 Dec 2025US 2025/0370869 A1
- Memory systems and methods of operating memory systems, electronic apparatuses, and computer readable storage mediums thereof23 Oct 2025US 2025/0328281 A1Yangtze Memory Technologies Co., Ltd.
- Firmware repair for three-dimensional nand memory9 May 2024US 2024/0152422 A1Yangtze Memory Technologies Co., Ltd.
- One Transistor Memory Bitcell with Arithmetic Capability22 Jun 2023US 2023/0197121 A1Ceremorphic, Inc.
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Flash EEPROM memory systems having multistate storage cells579US 5,043,940 A1991
- Multi-state EEprom read and write circuits and techniques432US 5,163,021 ASunDisk Corporation · 1992
- Multi-state flash EEPROM system using incremental programing and erasing methods293US 5,293,560 A1994