G11C 2211/563
Multilevel memory reading aspects
G11C2211/563 (Multilevel memory reading aspects) appears on 842 US grants and 677 published applications in this corpus.
Search patents in G11C- Granted patents
- 842
- Published applications
- 677
- Assignees
- 176
- Inventors
- 975
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 5 | 0 |
| 1995 | 8 | 0 |
| 1996 | 12 | 0 |
| 1997 | 16 | 0 |
| 1998 | 31 | 0 |
| 1999 | 32 | 0 |
| 2000 | 23 | 0 |
| 2001 | 23 | 14 |
| 2002 | 29 | 26 |
| 2003 | 20 | 23 |
| 2004 | 22 | 34 |
| 2005 | 21 | 18 |
| 2006 | 23 | 25 |
| 2007 | 24 | 31 |
| 2008 | 40 | 62 |
| 2009 | 45 | 70 |
| 2010 | 42 | 42 |
| 2011 | 51 | 46 |
| 2012 | 44 | 23 |
| 2013 | 39 | 22 |
| 2014 | 30 | 15 |
| 2015 | 23 | 14 |
| 2016 | 16 | 6 |
| 2017 | 12 | 14 |
| 2018 | 11 | 21 |
| 2019 | 37 | 46 |
| 2020 | 42 | 32 |
| 2021 | 25 | 32 |
| 2022 | 26 | 25 |
| 2023 | 22 | 15 |
| 2024 | 17 | 9 |
| 2025 | 7 | 5 |
| 2026 | 4 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Program verify pairing in a multi-level cell memory device11 Aug 2026US 12,706,163 B2Micron Technology, Inc.
- Nonvolatile memory device, controller for controlling the same, storage device having the same, and method of operating the same21 Apr 2026US 12,608,157 B2Samsung Electronics Co., Ltd.
- Partial block read voltage offset14 Apr 2026US 12,603,138 B2Micron Technology, Inc.
- Read soft bits through boosted modulation following reading hard bits27 Jan 2026US 12,537,064 B2Micron Technology, Inc.
- Firmware repair for three-dimensional NAND memory21 Oct 2025US 12,450,117 B2Yangtze Memory Technologies Co., Ltd.
- Nonvolatile memory device, controller for controlling the same, storage device having the same, and method of operating the same6 Aug 2026US 2026/0227933 A1Samsung Electronics Co., Ltd.
- Partial block read voltage offset6 Aug 2026US 2026/0229295 A1Micron Technology, Inc.
- Managing reference currents in semiconductor devices2 Jul 2026US 2026/0188391 A1Macronix International Co., Ltd.
- Read soft bits through boosted modulation following reading hard bits4 Jun 2026US 2026/0155189 A1Micron Technology, Inc.
- System and method for wordline group-based machine learning models4 Jun 2026US 2026/0155193 A1Microchip Technology Incorporated
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Compensating for coupling during read operations of non-volatile memory657US 7,196,928 B2SanDisk Corporation · 2007
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994