G11C 2211/5632
Multilevel reading using successive approximation
G11C2211/5632 (Multilevel reading using successive approximation) appears on 93 US grants and 73 published applications in this corpus.
Search patents in G11C- Granted patents
- 93
- Published applications
- 73
- Assignees
- 29
- Inventors
- 147
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 8 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 4 | 3 |
| 2003 | 1 | 1 |
| 2004 | 2 | 2 |
| 2005 | 1 | 1 |
| 2006 | 1 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 4 |
| 2009 | 2 | 1 |
| 2010 | 3 | 2 |
| 2011 | 4 | 4 |
| 2012 | 3 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 2 |
| 2015 | 0 | 1 |
| 2016 | 1 | 1 |
| 2017 | 1 | 2 |
| 2018 | 2 | 2 |
| 2019 | 3 | 3 |
| 2020 | 2 | 4 |
| 2021 | 12 | 15 |
| 2022 | 8 | 9 |
| 2023 | 9 | 8 |
| 2024 | 9 | 4 |
| 2025 | 0 | 0 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nonvolatile memory device, controller for controlling the same, storage device having the same, and method of operating the same21 Apr 2026US 12,608,157 B2Samsung Electronics Co., Ltd.
- Read soft bits through boosted modulation following reading hard bits27 Jan 2026US 12,537,064 B2Micron Technology, Inc.
- Soft decoding correctable page assisted reference voltage tracking5 Nov 2024US 12,136,464 B2Innogrit Technologies Co., Ltd.
- Use of data latches for plane level compression of soft bit data in non-volatile memories6 Aug 2024US 12,057,188 B2SanDisk Technologies LLC
- Reading of soft bits and hard bits from memory cells23 Jul 2024US 12,046,296 B2Micron Technology, Inc.
- Nonvolatile memory device, controller for controlling the same, storage device having the same, and method of operating the same6 Aug 2026US 2026/0227933 A1Samsung Electronics Co., Ltd.
- Read soft bits through boosted modulation following reading hard bits4 Jun 2026US 2026/0155189 A1Micron Technology, Inc.
- Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device21 Nov 2024US 2024/0386954 A1STMicroelectronics International N. V.
- Reading of soft bits and hard bits from memory cells14 Nov 2024US 2024/0379172 A1Micron Technology, Inc.
- System and method for pre-soft-decoding tracking for nand flash memories7 Nov 2024US 2024/0370199 A1Kioxia Corporation
Most cited
By later US patents
- Write verify schemes for flash memory with multilevel cells206US 5,539,690 AIntel Corporation · 1996
- Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell170US 5,687,114 AAgate Semiconductor, Inc. · 1997
- Drain bias multiplexing for multiple bit flash cell145US 5,485,422 AIntel Corporation · 1996
- Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method110US 5,729,490 ASGS-Thomson Microelectronics S.A. · 1998
- Address transition detection sensing interface for flash memory having multi-bit cells75US 5,594,691 AIntel Corporation · 1997