Reading of soft bits and hard bits from memory cells

A method, comprising:

• receiving a command to read memory cells in a device;
• determining, in response to the command and using a circuit of the device, signal and noise characteristics of the memory cells at a plurality of voltages, including applying by the circuit the plurality of voltages to the memory cells and determining states of the memory cells under the plurality of voltages;
• computing, based on the signal and noise characteristics, a read voltage;
• instructing the circuit to determine states of the memory cells at the read voltage and two voltages identified based on the read voltage, and generating first data based on states of the memory cells at the read voltage;
• generating a response to the command based on the states of the memory cells at the read voltage and the two voltages identified based on the read voltage;
• and
• generating second data based on exclusive or (XOR) of states of the memory cells at the two voltages;
• wherein the two voltages have offsets of a same predetermined amount from the read voltage.

A memory sub-system, comprising:

• a processing device;
• and
• at least one memory device, the memory device having:
• memory cells formed on an integrated circuit die;
• and
• a read circuit configured to apply voltages to the memory cells and determine states of the memory cells under the voltages;
• wherein the processing device is configured to transmit a read command to the memory device;
• and
• wherein in response to the read command, the memory device is configured to:
• determine, using the read circuit, signal and noise characteristics of the memory cells at a plurality of voltages;
• compute a read voltage based on the signal and noise characteristics;
• instruct the read circuit to determine states of the memory cells at the read voltage and two voltages identified based on the read voltage;
• generate a response to the read command based on the states of the memory cells at the read voltage and the two voltages identified based on the read voltage;
• generate first data based on states of the memory cells at the read voltage;
• and
• generate second data based on exclusive or (XOR) of states of the memory cells at the two voltages;
• wherein the two voltages have offsets of a same predetermined amount from the read voltage.