Partial block read voltage offset
AssigneeMicron Technology, Inc.
InventorsZhongguang XU, Murong LANG, Zhenming ZHOU, Ugo RUSSO, Niccolo' RIGHETTI, Nicola CIOCCHINI
Life of this patent
Estimating the term…
Abstract
A memory device may include a memory and a controller. The controller may be configured to receive a read command associated with a block of the memory. The controller may be configured to determine a block type associated with the block. The controller may be configured to identify, based on the block type, one or more read voltage offsets for a read operation associated with the block. The controller may be configured to perform the read operation based on the one or more read voltage offsets.
Claims20
A memory device, comprising:
- a memory;
- and
- a controller, configured to:
- receive a read command associated with a block of the memory;
- identify one or more read voltage offsets for a read operation associated with the block;
- determine one or more adjusted read reference voltages associated with the block based on the one or more read voltage offsets;
- and
- perform the read operation using the adjusted read reference voltages based on the one or more read voltage offsets.
A method, comprising:
- receiving, by a controller of a memory device, a read command associated with a block of a memory of the memory device;
- determining, by the controller, a word line type associated with a word line of the block;
- identifying, by the controller, one or more read voltage offsets for a read operation associated with the word line;
- identifying, for another read operation associated with another word line of the block, another one or more read voltage offsets in an inner word line look-up table stored by the controller;
- and
- performing, by the controller, the read operation based on the one or more read voltage offsets.
A memory device, comprising:
- one or more components, configured to:
- receive a read command associated with a block of a memory included in the one or more components;
- identify one or more read voltage offsets for a read operation associated with the block,
- wherein a quantity of the one or more read voltage offsets that is identified is based on a memory cell type of memory cells of the memory storing the block;
- and
- perform the read operation based on the one or more read voltage offsets.
Dependencies are inferred from the claim text.