G11C 2211/5633
Mixed concurrent serial multilevel reading
G11C2211/5633 (Mixed concurrent serial multilevel reading) appears on 6 US grants and 6 published applications in this corpus.
Search patents in G11C- Granted patents
- 6
- Published applications
- 6
- Assignees
- 6
- Inventors
- 18
- Latest grant
- 12 Aug 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 2 | 2 |
| 2009 | 1 | 0 |
| 2010 | 0 | 1 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Multi-free layer MTJ and multi-terminal read circuit with concurrent and differential sensing12 Aug 2014US 8,804,413 B2QUALCOMM Incorporated
- Flash memory device with multi level cell and burst access method therein25 Oct 2011US 8,045,376 B2Samsung Electronics Co., Ltd.
- Flash memory device with multi level cell and burst access method therein24 Nov 2009US 7,623,376 B2Samsung Electronics Co., Ltd.
- Multi-level cell serial-parallel sense scheme for non-volatile flash memory9 Dec 2008US 7,463,514 B1Intel Corporation
- Flash memory device with multi level cell and burst access method therein15 Apr 2008US 7,359,240 B2Samsung Electronics Co., Ltd.
- Nonvolatile memory and method with state encoding and page-by-page programming yielding invariant read points7 Apr 2016US 2016/0098197 A1SanDisk Technologies LLC
- Multi-free layer mtj and multi-terminal read circuit with concurrent and differential sensing8 Aug 2013US 2013/0201757 A1QUALCOMM Incorporated
- Flash memory device with multi level cell and burst access method therein4 Mar 2010US 2010/0054037 A1Samsung Electronics Co., Ltd.
- Multi-level cell serial-parallel sense scheme for non-volatile flash memory25 Dec 2008US 2008/0316813 A1Intel Corporation
- Flash memory device with multi level cell and burst access method therein19 Jun 2008US 2008/0144372 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method110US 5,729,490 ASGS-Thomson Microelectronics S.A. · 1998
- Multi-level cell serial-parallel sense scheme for non-volatile flash memory11US 7,463,514 B1Intel Corporation · 2008
- Flash memory device with multi level cell and burst access method therein8US 7,359,240 B2Samsung Electronics Co., Ltd. · 2008
- Multi-free layer MTJ and multi-terminal read circuit with concurrent and differential sensing7US 8,804,413 B2QUALCOMM Incorporated · 2014
- Flash memory device with multi level cell and burst access method therein3US 7,623,376 B2Samsung Electronics Co., Ltd. · 2009