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US 12,603,138 B2Granted
Partial block read voltage offset
AssigneeMicron Technology, Inc.
InventorsZhongguang Xu, Murong Lang, Zhenming Zhou, Ugo Russo, Niccolo' Righetti, Nicola Ciocchini
Life of this patent
Estimating the term…
Abstract
A memory device may include a memory and a controller. The controller may be configured to receive a read command associated with a block of the memory. The controller may be configured to determine a block type associated with the block. The controller may be configured to identify, based on the block type, one or more read voltage offsets for a read operation associated with the block. The controller may be configured to perform the read operation based on the one or more read voltage offsets.
Claims28
A memory device, comprising:
- a memory;
- and
- a controller, configured to:
- receive a read command associated with a block of the memory;
- determine that a block type associated with the block is a partial block type in which at least a portion of word lines of the block are erased;
- identify, based on the block type being the partial block type, one or more read voltage offsets for a read operation associated with the block;
- determine one or more adjusted read reference voltages associated with the block based on the one or more read voltage offsets;
- and
- perform the read operation using the adjusted read reference voltages based on the one or more read voltage offsets.
6 more elements
A method, comprising:
- receiving, by a controller of a memory device, a read command associated with a block of a memory of the memory device;
- determining, by the controller, that a block type associated with the block is a partial block type;
- determining, by the controller based on the block type associated with the block being a partial block type, a word line type associated with a word line of the block;
- identifying, by the controller, one or more read voltage offsets for a read operation associated with the word line;
- identifying, for another read operation associated with another word line of the block, another one or more read voltage offsets in an inner word line look-up table stored by the controller;
- and
- performing, by the controller, the read operation based on the one or more read voltage offsets.
4 more elements
A memory device, comprising:
- one or more components, configured to:
- receive a read command associated with a block of a memory included in the one or more components;
- determine that a block type associated with the block is a partial block type in which at least a portion of word lines of the block are erased;
- identify, based on the block type being the partial block type, one or more read voltage offsets for a read operation associated with the block,
- wherein a quantity of the one or more read voltage offsets that is identified is based on memory cell type of memory cells of the memory storing the block;
- and
- perform the read operation based on the one or more read voltage offsets.
4 more elements
A method, comprising:
- receiving, by a memory controller of a memory device, a read command associated with a block of a memory of the memory device;
- identifying, by the memory controller and based on a percentage of utilized word lines of the block, one or more read voltage offsets for a read operation associated with a word line;
- and
- performing, by the memory controller, the read operation based on the one or more read voltage offsets.
1 more element
A memory device, comprising:
- a memory;
- and
- a controller, configured to:
- receive, from a host device, a read command associated with a block of the memory;
- determine that a block type associated with the block is a partial block type;
- determine, based on determining that the block type is the partial block type, a first word line of the block and a second word line of the block;
- issue a first read on the first word line and a second read on the second word line;
- identify one or more first read voltage offsets for a first read operation associated with the first word line;
- identify one or more second read voltage offsets for a second read operation associated with the second word line;
- perform the first read operation based on the one or more first read voltage offsets;
- and
- perform the second read operation based on the one or more second read voltage offsets.
9 more elements
Dependencies are inferred from the claim text.