G11C 2211/5616
Multilevel magnetic memory cell using non-magnetic conducting interlayer
Official title: Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV
G11C2211/5616 (Multilevel magnetic memory cell using non-magnetic conducting interlayer) appears on 25 US grants and 10 published applications in this corpus.
Search patents in G11C- Granted patents
- 25
- Published applications
- 10
- Assignees
- 11
- Inventors
- 38
- Latest grant
- 10 Nov 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 7 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 2 |
| 2003 | 1 | 1 |
| 2004 | 2 | 2 |
| 2005 | 3 | 3 |
| 2006 | 3 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Perpendicular magnetic memory with symmetric fixed layers10 Nov 2020US 10,832,749 B2Intel Corporation
- Multiple-bit magnetic random access memory cell employing adiabatic switching19 Sep 2006US 7,109,539 B2International Business Machines Corporation
- Multi-bit MRAM device with switching nucleation sites18 Jul 2006US 7,078,244 B2Hewlett-Packard Development Company, L. P.
- Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell28 Mar 2006US 7,018,725 B2Matsushita Electric Industrial Co., Ltd.
- Multi-bit MRAM device with switching nucleation sites9 Aug 2005US 6,927,995 B2Hewlett-Packard Development Company, L. P.
- Perpendicular magnetic memory with symmetric fixed layers6 Feb 2020US 2020/0043536 A1Intel Corporation
- Giant magnetoresistance (GMR) memory device22 Oct 2009US 2009/0262570 A1Advanced Micro Devices, Inc.
- Multiple-bit magnetic random access memory cell employing adiabatic switching15 Sep 2005US 2005/0199927 A1International Business Machines Corporation
- Multi-bit MRAM device with switching nucleation sites8 Sep 2005US 2005/0195649 A1Hewlett-Packard Development Company, L. P.
- Multi-bit magnetic memory cells4 Aug 2005US 2005/0167657 A1
Most cited
By later US patents
- Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell138US 6,436,526 B1Matsushita Electric Industrial Co., Ltd. · 2002
- Multi-layer magnetic tunneling junction memory cells134US 5,734,605 AMotorola, Inc. · 1998
- MRAM cell requiring low switching field68US 5,917,749 AMotorola, Inc. · 1999
- Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same67US 5,841,611 AMatsushita Electric Industrial Co., Ltd. · 1998
- Element exploiting magnetic material and addressing method therefor51US 6,178,112 B1Sony Corporation · 2001