Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroshi Sakakima, Yousuke N Irie, Mitsuo Satomi, Yasuhiro Kawawake
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Abstract
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
Claims60
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film comprising at least one of CoPt, CoTaCr and CoPtCr, a soft magnetic film, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of a magnetic field to be detected.
A magnetoresistance effect device according to claim 22, wherein the substrate is an Si (100) single crystalline substrate, the multilayer structure is formed on the substrate via a underlayer mainly made of Cu.
A magnetoresistance effect device according to claim 27, wherein the non-magnetic metal film between the consecutive soft magnetic films and the non-magnetic metal film between the consecutive hard magnetic films is a single film mainly made of Cu, the non-magnetic metal film between the consecutive soft magnetic film and the hard magnetic film is composed of a film mainly made of Cu with an Ag or Au film inserted therein.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film comprising at least one of CoPt, CoTaCr and CoPtCr, a soft magnetic film, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film;
- and
- a yoke for guiding a signal magnetic field from a magnetic medium to the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of the signal magnetic field guided by the yoke.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film, a soft magnetic film comprising CoFeB, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of a magnetic field to be detected.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film, a soft magnetic film comprising CoFeB, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film;
- and
- a yoke for guiding a signal magnetic field from a magnetic medium to the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of the signal magnetic field guided by the yoke.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film comprising Co.sub.Y Fe.sub.1-Y (0.3<Y<0.7), a soft magnetic film, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of a magnetic field to be detected.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film comprising Co.sub.Y Fe.sub.1-Y (0.3<Y<0.7), a soft magnetic film, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film;
- and
- a yoke for guiding a signal magnetic field from a magnetic medium to the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of the signal magnetic field guided by the yoke.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film comprising at least one of CoPt, CoFe, CoTaCr and CoPtCr, a soft magnetic film, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of a magnetic field to be detected, with the proviso that the magnetoresistance effect device does not comprise an antiferromagnetic layer.
A magnetoresistance effect device comprising:
- a substrate:
- and
- a multilayer structure formed on the substrate, the multilayer structure including a hard magnetic film comprising at least one of CoPt, CoFe, CoTaCr and CoPtCr, a soft magnetic film, and a non-magnetic film for separating the hard magnetic film from the soft magnetic film;
- and
- a yoke for guiding a signal magnetic field from a magnetic medium to the soft magnetic film,
- wherein a direction of a magnetization easy axis of the hard magnetic film substantially agrees to a direction of the signal magnetic field guided by the yoke, with the proviso that the magnetoresistance effect device does not comprise an antiferromagnetic layer.
Dependencies are inferred from the claim text.