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US 7,078,244 B2Granted
Multi-bit MRAM device with switching nucleation sites
AssigneeHewlett-Packard Development Company, L.P.
InventorsJanice H. Nickel, Manoj K. Bhattacharyya
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Abstract
A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
Claims4
A method for producing a magnetic memory cell comprising the following:
- forming a first magneto-resistive device having a first sense layer, including:
- placing at least one controlled nucleation site on the first sense layer;
- and,
- forming a second magneto-resistive device connected in series with the first magneto-resistive device, the second magneto-resistive device having a second sense layer, including:
- placing at least one controlled nucleation site on the second sense layer.
2 more elements
Dependencies are inferred from the claim text.