Perpendicular magnetic memory with symmetric fixed layers
AssigneeIntel Corporation
InventorsCharles C. Kuo, Justin S. Brockman, Juan G. Alzate Vinasco, Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Mark L. Doczy, Satyarth Suri, Robert S. Chau
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Abstract
An embodiment includes an apparatus comprising: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein.
Claims25
An apparatus comprising:
- a substrate;
- a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers;
- a first dielectric layer between the first fixed layer and the free layer;
- and
- a second dielectric layer between the second fixed layer and the free layer.
An apparatus comprising:
- a substrate;
- a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers;
- a first dielectric layer between the first fixed layer and the free layer;
- and
- a second layer between the second fixed layer and the free layer.
A method comprising:
- forming a perpendicular magnetic tunnel junction (pMTJ) stack including first and second fixed layers above and below a free layer;
- orienting the magnetization of the first and second fixed layers in a first direction;
- and
- orienting the magnetization of the first fixed layer, but not the second fixed layer, anti-parallel (AP) to the first direction;
- wherein the first fixed layer has a first fixed layer effective anisotropy constant (Keff), the second fixed layer has a second fixed layer Keff, and the first fixed layer Keff is greater than the second fixed layer Keff.
Dependencies are inferred from the claim text.