Multi-bit MRAM device with switching nucleation sites

An information storage device composed of a plurality of magnetic memory cells, each cell comprising:

• a first magneto-resistive device;
• and,
• a second magneto-resistive device connected in series with the first magneto-resistive device;
• wherein the plurality of magnetic memory cells have increased switching predictability resulting from placement of at least one controlled nucleation site on a sense layer of at least one of the first magneto-resistive device and the second magneto-resistive device.

A device comprising:

• a magnetic random access memory, the magnetic random access memory comprising a plurality of magnetic memory cell, each magnetic memory cell comprising:
• a first magneto-resistive device having a first sense layer, and
• a second magneto-resistive device connected in series with the first magneto-resistive device, the second magneto-resistive device having a second sense layer;
• wherein at least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.