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US 10,832,749 B2Granted
Perpendicular magnetic memory with symmetric fixed layers
AssigneeIntel Corporation
InventorsCharles C. Kuo, Justin S. Brockman, Juan G. Alzate Vinasco, Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Mark L. Doczy, Satyarth Suri, Robert S. Chau
Life of this patent
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Abstract
An embodiment includes an apparatus including: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, including a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein.
Claims25
An apparatus comprising:
- a substrate;
- a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers;
- a first dielectric layer between the first fixed layer and the free layer;
- and
- a second dielectric layer between the second fixed layer and the free layer;
- wherein the first fixed layer is anti-parallel to the second fixed layer.
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An apparatus comprising:
- a substrate;
- a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers;
- a first dielectric layer between the first fixed layer and the free layer;
- and
- a second layer between the second fixed layer and the free layer;
- wherein the first fixed layer has a first fixed layer effective anisotropy constant (Keff), the second fixed layer has a second fixed layer Keff, and the first fixed layer Keff is greater than the second fixed layer Keff.
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An apparatus comprising:
- a substrate;
- a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers;
- a first dielectric layer between the first fixed layer and the free layer;
- a second dielectric layer between the second fixed layer and the free layer;
- and
- a mobile computing node including a non-volatile memory that comprises the pMTJ.
3 more elements
Dependencies are inferred from the claim text.