G11C 2211/5614
Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
G11C2211/5614 (Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements) appears on 87 US grants and 39 published applications in this corpus.
Search patents in G11C- Granted patents
- 87
- Published applications
- 39
- Assignees
- 47
- Inventors
- 128
- Latest grant
- 23 Jun 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 9 | 2 |
| 2002 | 4 | 2 |
| 2003 | 1 | 3 |
| 2004 | 3 | 7 |
| 2005 | 2 | 3 |
| 2006 | 4 | 1 |
| 2007 | 1 | 8 |
| 2008 | 3 | 3 |
| 2009 | 1 | 2 |
| 2010 | 3 | 1 |
| 2011 | 2 | 1 |
| 2012 | 2 | 1 |
| 2013 | 2 | 1 |
| 2014 | 1 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 2 |
| 2020 | 4 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Memory array structure, in-memory computing apparatus and method thereof23 Jun 2020US 10,692,549 B1Taiwan Semiconductor Manufacturing Company.Ltd
- Concurrent multi-state program verify for non-volatile memory5 May 2020US 10,643,695 B1SanDisk Technologies LLC
- SOT-MRAM and method for writing data thereof28 Apr 2020US 10,636,467 B2Korea University Research and Business Foundation
- Storage device, information processing apparatus, and storage device control method10 Mar 2020US 10,586,578 B2Sony Corporation
- Metal-insulator phase transition flip-flop3 May 2016US 9,331,700 B2Hewlett Packard Enterprise Development LP
- Sot-mram and method for writing data thereof28 Nov 2019US 2019/0362765 A1Korea University Research and Business Foundation
- Storage device, information processing apparatus, and storage device control method14 Feb 2019US 2019/0051338 A1Sony Corporation
- Metal-insulator phase transition flip-flop28 Jul 2016US 2016/0217850 A1Hewlett Packard Enterprise Development LP
- Metal-insulator phase transition flip-flop23 Oct 2014US 2014/0313818 A1Hewlett Packard Enterprise Development LP
- Metal-insulator transition latch2 May 2013US 2013/0106480 A1Hewlett-Packard Development Company, L. P.
Most cited
By later US patents
- Resonant tunneling memory166US 5,869,845 ATexas Instruments Incorporated · 1999
- Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same133US 5,745,407 ACalifornia Institute of Technology · 1998
- Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same109US 5,535,156 ACalifornia Institute of Technology · 1996
- Electronic arrays having thin film line drivers105US 4,782,340 AEnergy Conversion Devices, Inc. · 1988
- Resonance tunnel diode memory94US 5,390,145 AFujitsu Limited · 1995