SOT-MRAM and method for writing data thereof
AssigneeKorea University Research and Business Foundation
InventorsJongsun Park, Gyuseong Kang
Life of this patent
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Abstract
A semiconductor device includes a line driving unit connected to a memory cell array, a switch unit including first and second output terminals electrically connected to the memory cell array through a plurality of bit lines and a plurality of source lines, and a power supply unit outputting a precharge voltage and a source voltage to the first and second output terminals. The power supply unit includes a negative voltage generation unit that charge-shares the precharge voltage to be charged with a first voltage and discharges the first voltage to one side to generate a negative voltage on the other side.
Claims20
A semiconductor device comprising:
- a line driving unit connected to a memory cell array;
- a switch unit comprising first and second output terminals electrically connected to the memory cell array through a plurality of bit lines and a plurality of source lines;
- and
- a power supply unit outputting a precharge voltage and a source voltage to the first and second output terminals, wherein the power supply unit comprises a negative voltage generation unit that charge-shares the precharge voltage to be charged with a first voltage and discharges the first voltage to one side to generate a negative voltage on the other side.
A method for writing data of a semiconductor device, comprising:
- allowing a negative voltage generation unit to charge-share a precharge voltage output to a first output terminal from a power supply unit and a charge capacitor to be charged with a first voltage based on the precharge voltage;
- allowing the negative voltage generation unit to discharge the first voltage through a first node located at one side of the charge capacitor;
- and
- allowing the negative voltage generation unit to output a negative voltage generated on a second node located at the other side of the charge capacitor to a second output terminal based on the discharge of the first voltage.
Dependencies are inferred from the claim text.