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US 5,869,845 AGranted
Resonant tunneling memory
AssigneeTexas Instruments Incorporated
InventorsJan Paul Vander Wagt, Hao Tang
Life of this patent
Estimating the term…
Abstract
A resonant tunneling diode stack used as a memory cell stack (X0-Xn) with sequential read out of bits of data cells (X1-Xn) by increasing ramp rates to transfer the stored bit to a lowest ramp rate cell (X0).
Claims3
A resonant tunneling diode stack, comprising:
- (a) series connected resonant tunneling diodes, RTD0, RTD1, . . . RTDn, between a node and a reference voltage;
- (b) a current source connected to said node;
- and
- (c) wherein RTD0 has a valley current less than a current supplied by said current source and RTD1, . . . RTDn each has a valley current larger than said current supplied by said current source.
1 more element
Dependencies are inferred from the claim text.