Metal-insulator phase transition flip-flop

A metal-insulator phase transition (MIT) flip-flop comprising:

• a first electrode and a second electrode;
• a metal-insulator transition (MIT) material connected between the first and second electrodes and having current-controlled negative differential resistance (CC-NDR) when under electrical bias, the MIT material between the electrodes to exhibit a pair of operating states of the MIT flip-flop that are bi-stable;
• and
• an input driver to select one of the operating states in response to a programming voltage and to provide a bias voltage to maintain the selected operating state where the bias voltage is applied throughout a time that the selected operating state is maintained, a first operating state of the pair being selected by a first programming voltage and a second operating state of the pair being selected by a second programming voltage,
• wherein the selected operating state represents a logic state of the MIT flip-flop.

A method of setting and holding a logic state of a metal-insulator phase transition (MIT) flip-flop, the method comprising:

• applying a programming voltage to a metal-insulator phase transition (MIT) device to select between a pair of bi-stable operating states of the MIT device that represent logic states of the MIT flip-flop, the MIT device having a current-controlled negative differential resistance (CC-NDR) that provides the pair of bi-stable operating states;
• and
• providing a bias voltage to the MIT device to hold the selected bi-stable operating state in the absence of the programming voltage, the bias voltage being applied throughout a time that the selected bi-stable operating state is maintained in the MIT device,
• wherein the programming voltage being below a first threshold selects a first bi-stable operating state of the pair, and wherein the programming voltage being above a second threshold selects a second bi-stable operating state of the pair.