G11C 2207/005
Transfer gates, i.e. gates coupling the sense amplifier output to data lines
Official title: Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
G11C2207/005 (Transfer gates, i.e. gates coupling the sense amplifier output to data lines) appears on 666 US grants and 689 published applications in this corpus.
Search patents in G11C- Granted patents
- 666
- Published applications
- 689
- Assignees
- 142
- Inventors
- 899
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 4 |
| 2002 | 9 | 8 |
| 2003 | 8 | 8 |
| 2004 | 16 | 40 |
| 2005 | 25 | 31 |
| 2006 | 34 | 40 |
| 2007 | 29 | 40 |
| 2008 | 30 | 36 |
| 2009 | 34 | 29 |
| 2010 | 28 | 26 |
| 2011 | 22 | 33 |
| 2012 | 29 | 22 |
| 2013 | 21 | 26 |
| 2014 | 23 | 23 |
| 2015 | 32 | 26 |
| 2016 | 26 | 31 |
| 2017 | 33 | 29 |
| 2018 | 29 | 26 |
| 2019 | 33 | 43 |
| 2020 | 43 | 28 |
| 2021 | 29 | 34 |
| 2022 | 26 | 32 |
| 2023 | 26 | 29 |
| 2024 | 35 | 27 |
| 2025 | 24 | 14 |
| 2026 | 6 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Inductive energy harvesting and signal development for a memory device7 Apr 2026US 12,597,449 B2Micron Technology, Inc.
- Techniques to map and access column read enabled memory7 Apr 2026US 12,597,463 B2Intel Corporation
- Static random access memory with write assist circuit24 Mar 2026US 12,586,635 B2Taiwan Semiconductor Manufacturing Company.Ltd
- DRAM device with multiple voltage domains10 Mar 2026US 12,573,448 B2Rambus Inc.
- Semiconductor structure and memory10 Mar 2026US 12,575,092 B2Changxin Memory Technologies, Inc.
- Memory device13 Aug 2026US 2026/0237415 A1Kioxia Corporation
- Semiconductor structure and memory11 Jun 2026US 2026/0164652 A1Changxin Memory Technologies, Inc.
- Memory device having segmented data line structure12 Mar 2026US 2026/0073974 A1AP Memory Technology Corp.
- Serial-gate transistor and nonvolatile memory device including the same26 Feb 2026US 2026/0057942 A1Samsung Electronics Co., Ltd.
- Static Random Access Memory Device4 Dec 2025US 2025/0372159 A1
Most cited
By later US patents
- DRAM having bidirectional global bit lines453US 5,367,488 AGoldstar Electron Co., Ltd. · 1994
- Dynamic memory with isolated digit lines445US 5,506,811 AMicron Technology, Inc. · 1996
- Fast, low power, write scheme for memory circuits using pulsed off isolation device423US 6,122,211 AMicron Technology, Inc. · 2000
- Semiconductor memory device with floating storage bulk region and method of manufacturing the same180US 6,621,725 B2Kabushiki Kaisha Toshiba · 2003
- Memory with isolated digit lines145US 5,369,622 AMicron Semiconductor, Inc. · 1994