G02B 6/131
By using epitaxial growth
Official title: {by using epitaxial growth (epitaxial growth for semiconductors H10P14/20)}
G02B6/131 (By using epitaxial growth) appears on 296 US grants and 286 published applications in this corpus.
Search patents in G02B- Granted patents
- 296
- Published applications
- 286
- Assignees
- 141
- Inventors
- 701
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 3 |
| 2002 | 2 | 3 |
| 2003 | 4 | 17 |
| 2004 | 3 | 4 |
| 2005 | 6 | 13 |
| 2006 | 6 | 4 |
| 2007 | 6 | 12 |
| 2008 | 8 | 9 |
| 2009 | 10 | 6 |
| 2010 | 10 | 3 |
| 2011 | 6 | 7 |
| 2012 | 6 | 5 |
| 2013 | 3 | 8 |
| 2014 | 6 | 9 |
| 2015 | 9 | 12 |
| 2016 | 11 | 15 |
| 2017 | 21 | 23 |
| 2018 | 18 | 12 |
| 2019 | 13 | 22 |
| 2020 | 15 | 10 |
| 2021 | 17 | 15 |
| 2022 | 10 | 19 |
| 2023 | 13 | 15 |
| 2024 | 11 | 16 |
| 2025 | 12 | 15 |
| 2026 | 8 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vertically tapered spot size converter and method for fabricating the same1 Sep 2026US 12,724,199 B2National Research Council of Canada
- Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures21 Jul 2026US 12,690,212 B2
- Optical waveguide and method of manufacture thereof19 May 2026US 12,631,822 B2NTT, Inc.
- Optical device and method of manufacture14 Apr 2026US 12,601,875 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Waveguide structure24 Mar 2026US 12,585,063 B2Rockley Photonics Limited
- Optical chip, method of preparing optical chip, and optical module1 Oct 2026US 2026/0299194 A1Hisense Broadband Multimedia Technologies Co., Ltd.
- Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures17 Sep 2026US 2026/0282412 A1
- Surface Coupling and Optical Beam Expansion System in a Photonic Integrated Circuit3 Sep 2026US 2026/0259371 A1
- Optical device and method of manufacture23 Jul 2026US 2026/0211183 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Photodiode and method of fabricating same2 Jul 2026US 2026/0190507 A1
Most cited
By later US patents
- Electro-optic structure and process for fabricating same154US 6,493,497 B1Motorola, Inc. · 2002
- Low defect density/arbitrary lattice constant heteroepitaxial layers101US 5,659,187 AInternational Business Machines Corporation · 1997
- Process for growing a film epitaxially upon an oxide surface and structures formed with the process78US 5,450,812 AMartin Marietta Energy Systems, Inc. · 1995
- Transmitter photonic integrated circuit (TxPIC) chips78US 7,885,492 B2Infinera Corporation · 2011
- Ultra-high multiplex analytical systems and methods66US 8,247,216 B2Pacific Biosciences of California, Inc. · 2012