Optical chip, method of preparing optical chip, and optical module

A method of preparing an optical chip, comprising:

• forming a ridged waveguide, the ridged waveguide comprising a first region and a second region, wherein the first region is configured to arrange an electrode thereon, the second region is located at opposite ends of the first region, and the electrode is not arranged above the second region, and wherein the first region comprises an n++-InGaAs layer, a fourth n-InP layer, an i-InP layer, an i-InGaAsP layer and a quantum well layer that are arranged from top to bottom, and the second region comprises an n++-InGaAs layer, a fourth n-InP layer, an i-InP layer, an i-InGaAsP layer and a quantum well layer that are arranged from top to bottom;
• or, the first region comprises a p++-InGaAs layer, a p-InP layer, an i-InP layer, an i-InGaAsP layer and a quantum well layer that are arranged from top to bottom, and the second region comprises a p++-InGaAs layer, a p-InP layer, an i-InP layer, an i-InGaAsP layer and a quantum well layer that are arranged from top to bottom;
• covering the first region with a preset mask, and implanting helium ions into the second region in multiple times, wherein there are no helium ions in the first region;
• there are helium ions in the n++-InGaAs layer and the fourth n-InP layer in the second region, or in the p++-InGaAs layer and the p-InP layer in the second region;
• and there are no helium ions in the i-InP layer and below the i-InP layer in the second region;
• and
• forming the electrode and a radio frequency traveling waveguide on a top of the first region, wherein the electrode is electrically connected to the radio frequency traveling waveguide.

An optical module, comprising:

• a circuit board;
• an optical chip that is electrically connected to the circuit board and configured to modulate and generate an optical signal, wherein the optical chip comprises an electrode and a ridged waveguide, and wherein
• the ridged waveguide comprises, from top to bottom, an n++-InGaAs layer, a fourth n-InP layer, an i-InP layer, an i-InGaAsP layer and a quantum well layer;
• or comprises, from top to bottom, a p++-InGaAs layer, a p-InP layer, an i-InP layer, an i-InGaAsP layer and a quantum well layer;
• the ridged waveguide comprises a first region and a second region, wherein the second region is located at a side of the first region;
• the electrode is arranged above the first region, while the electrode is not arranged above the second region;
• there are no helium ions in the first region;
• there are helium ions in the n++-InGaAs layer and the fourth n-InP layer in the second region, or there are helium ions in the p++-InGaAs layer and the p-InP layer in the second region, and there are no helium ions in the i-InP layer and below the i-InP layer in the second region.