Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures

A method of forming an integrated circuit comprising:

• depositing or providing a plurality of semiconductor layers supported on a substrate, wherein the plurality of semiconductor layers include a p-type gate-all-around layer structure that includes a plurality of quantum well structures formed between a pair of p-type thin doped layers spaced vertically from each other;
• implanting p-type ions into the plurality of semiconductor layers to form at least one ion-implanted p-type gate contact region that extends through the p-type gate-all-around layer structure and contacts the p-type thin doped layers of the p-type gate-all-around layer structure;
• implanting n-type ions into the plurality of semiconductor layers to form an ion-implanted n-type source contact region and an ion-implanted n-type drain contact region, both of which are in contact with the p-type gate-all-around layer structure;
• forming a gate electrode of an n-channel heterojunction field effect transistor (HFET) device in contact with the at least one ion-implanted p-type gate contact region;
• and
• forming source and drain electrodes of the n-channel HFET device in contact with the ion-implanted n-type source contact region and the ion-implanted n-type drain contact region, respectively.