C30B 19/106
Adding crystallising material or reactants forming it in situ to the liquid
Official title: {adding crystallising material or reactants forming it in situ to the liquid}
C30B19/106 (Adding crystallising material or reactants forming it in situ to the liquid) appears on 27 US grants and 22 published applications in this corpus.
Search patents in C30B- Granted patents
- 27
- Published applications
- 22
- Assignees
- 23
- Inventors
- 78
- Latest grant
- 18 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 1 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 2 |
| 2017 | 2 | 2 |
| 2018 | 1 | 1 |
| 2019 | 1 | 1 |
| 2020 | 0 | 2 |
| 2021 | 1 | 2 |
| 2022 | 3 | 1 |
| 2023 | 1 | 2 |
| 2024 | 1 | 1 |
| 2025 | 2 | 3 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of preparing single crystal perovskite and method of manufacturing solar cell using single crystal perovskite18 Nov 2025US 12,473,660 B2Korea Electric Power Corporation
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy1 Apr 2025US 12,266,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High refractive index organic solid crystal with controlled surface roughness2 Jul 2024US 12,024,793 B2Meta Platforms Technologies, LLC
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Oct 2023US 11,784,045 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Liquid phase epitaxy of III-V materials and alloys13 Sep 2022US 11,441,234 B2University of Louisville Research Foundation, Inc.
- Method of preparing single crystal perovskite and method of manufacturing solar cell using single crystal perovskite12 Feb 2026US 2026/0047329 A1Korea Electric Power Corporation
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Jul 2025US 2025/0226217 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystal preparation apparatus and crystal preparation method13 Mar 2025US 2025/0084558 A1Meishan Boya Advanced Materials Co., Ltd.
- Method of producing single crystal aln, single crystal aln, and single crystal aln production apparatus30 Jan 2025US 2025/0034751 A1Dowa Holdings Co., Ltd.
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy25 Jan 2024US 2024/0030027 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method and apparatus for production of liquid phase epitaxial layers of semiconductors22US 3,933,538 ASumitomo Electric Industries, Ltd. · 1976
- Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure18US 4,315,796 AZaidan Hojin Handotai Kenkyu Shinkokai · 1982
- Method of preparing a plurality of castings having a predetermined composition18US 4,529,027 AU. S. Philips Corporation · 1985
- Method for growing epitaxial layers on multiple semiconductor wafers from liquid phase5US 4,063,972 ASumitomo Electric Industries, Ltd. · 1977
- Solution growth system for the preparation of semiconductor materials4US 3,933,539 ATexas Instruments Incorporated · 1976